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Subgap Kinetic Inductance Detector Sensitive to 85-GHz Radiation

F. Lévy-Bertrand, A. Benoı̂t, O. Bourrion, Martino Calvo, Andrea Catalano, J. Goupy, Francesco Valenti, Nataliya Maleeva, Lukas Grünhaupt, Ioan M. Pop, A. Monfardini

Published Jan 1, 2021• 9 citations
Publisher

Abstract

We have fabricated an array of subgap kinetic inductance detectors (SKIDs) made of granular aluminum (T$_{c}$∼2 K) sensitive in the 80–90 GHz frequency band and operating at 300 mK. We measure a noise equivalent power of 1.3×10$^{Zahl}$-16W/Hz$^{Zahl}$0.5 on average and 2.6×10$^{-17}$W/Hz$^{0.5}$ at best, for an illuminating power of 50 fW per pixel. Even though the circuit design of SKIDs is identical to that of the kinetic inductance detectors, the SKIDs operating principle is based on their sensitivity to subgap excitations. This detection scheme is advantageous because it avoids having to lower the operating temperature proportionally to the lowest detectable frequency. The SKIDs presented here are intrinsically selecting the 80–90 GHz frequency band, well below the superconducting spectral gap of the film, at approximately 180 GHz.

DOI
10.5445/ir/1000132356

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Subgap Kinetic Inductance Detector Sensitive to 85-GHz Radiation

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We have fabricated an array of subgap kinetic inductance detectors (SKIDs) made of granular aluminum (${T}_{c}\ensuremath{\sim}2$ K) sensitive in the 80--90 GHz frequency band and operating at 300 mK. We measure a noise equivalent power of $1.3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}16}\phantom{\rule{0.2em}{0ex}}{\mathrm{W}/\mathrm{Hz}}^{0.5}$ on average and $2.6\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}17}\phantom{\rule{0.2em}{0ex}}{\mathrm{W}/\mathrm{Hz}}^{0.5}$ at best, for an illuminating power of 50 fW per pixel. Even though the circuit design of SKIDs is identical to that of the kinetic inductance detectors, the SKIDs operating principle is based on their sensitivity to subgap excitations. This detection scheme is advantageous because it avoids having to lower the operating temperature proportionally to the lowest detectable frequency. The SKIDs presented here are intrinsically selecting the 80--90 GHz frequency band, well below the superconducting spectral gap of the film, at approximately 180 GHz.

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Aluminum lumped-element kinetic inductance detectors (LEKIDs) sensitive to millimeter-wave photons have been shown to exhibit high quality factors, making them highly sensitive and multiplexable. The superconducting gap of aluminum limits aluminum LEKIDs to photon frequencies above 100 GHz. Manganese-doped aluminum (Al-Mn) has a tunable critical temperature and could therefore be an attractive material for LEKIDs sensitive to frequencies below 100 GHz if the internal quality factor remains sufficiently high when manganese is added to the film. To investigate, we measured some of the key properties of Al-Mn LEKIDs. A prototype eight-element LEKID array was fabricated using a 40 nm thick film of Al-Mn deposited on a 500 μm thick high-resistivity, float-zone silicon substrate. The manganese content was 900 ppm, the measured Tc = 694 ± 1mK, and the resonance frequencies were near 150 MHz. Using measurements of the forward scattering parameter S21 at various bath temperatures between 65 and 250 mK, we determined that the Al-Mn LEKIDs we fabricated have internal quality factors greater than 2 × 105, which is high enough for millimeter-wave astrophysical observations. In the dark conditions under which these devices were measured, the fractional frequency noise spectrum shows a shallow slope that depends on bath temperature and probe tone amplitude, which could be two-level system noise. The anticipated white photon noise should dominate this level of low-frequency noise when the detectors are illuminated with millimeter-waves in future measurements. The LEKIDs responded to light pulses from a 1550 nm light-emitting diode, and we used these light pulses to determine that the quasiparticle lifetime is 60 μs.

arXiv:1701.08461•Applied Physics Letters•May 29, 2017•14 citations
We have fabricated an array of subgap kinetic inductance detectors (SKIDs) made of granular aluminum (Tc_{c}c​∼2 K) sensitive in the 80–90 GHz frequency band and operating at 300 mK. We measure a noise equivalent power of 1.3×10Zahl^{Zahl}Zahl-16W/HzZahl^{Zahl}Zahl0.5 on average and 2.6×10−17^{-17}−17W/Hz0.5^{0.5}0.5 at best, for an illuminating power of 50 fW per pixel. Even though the circuit design of SKIDs is identical to that of the kinetic inductance detectors, the SKIDs operating principle is based on their sensitivity to subgap excitations. This detection scheme is advantageous because it avoids having to lower the operating temperature proportionally to the lowest detectable frequency. The SKIDs presented here are intrinsically selecting the 80–90 GHz frequency band, well below the superconducting spectral gap of the film, at approximately 180 GHz.
We have fabricated an array of subgap kinetic inductance detectors (SKIDs) made of granular aluminum (${T}_{c}\ensuremath{\sim}2$ K) sensitive in the 80--90 GHz frequency band and operating at 300 mK. We measure a noise equivalent power of $1.3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}16}\phantom{\rule{0.2em}{0ex}}{\mathrm{W}/\mathrm{Hz}}^{0.5}$ on average and $2.6\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}17}\phantom{\rule{0.2em}{0ex}}{\mathrm{W}/\mathrm{Hz}}^{0.5}$ at best, for an illuminating power of 50 fW per pixel. Even though the circuit design of SKIDs is identical to that of the kinetic inductance detectors, the SKIDs operating principle is based on their sensitivity to subgap excitations. This detection scheme is advantageous because it avoids having to lower the operating temperature proportionally to the lowest detectable frequency. The SKIDs presented here are intrinsically selecting the 80--90 GHz frequency band, well below the superconducting spectral gap of the film, at approximately 180 GHz.
As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detector is one of the key performance indicators. Herein a noise power spectrum analysis method is introduced in detail, which can accurately and effectively analyze the noise spectrum of kinetic inductance detector in a wide frequency range. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting the appropriate frequency resolutions for different frequency bands. This method is used to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micromachining processes. We deposite a 25-nm-thick aluminum film on high-resistivity silicon substrate for one device, while place one silicon nitride (SiNx) film on the top and one on the bottom of the aluminum film for another device. It is found that the frequency noise of the device with two silicon nitride films is about 25% to 50% of the bare aluminum device. Using this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor designs. We investigate the noise properties of these devices at different microwave driven power and bath temperatures, and the experimental results show typical two-level system noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detector, and also paves the way to developing low-noise aluminum kinetic inductance detectors for terahertz imaging, photon-counting and energy-resolving applications.
Microwave Kinetic Inductance Detectors (MKIDs), with high sensitivity and relatively simple frequency multiplexing, are emerging as a kind of large-array detectors in the terahertz (THz) band. An MKID, like a superconducting resonator, is composed of a planar capacitor and inductor that are made from superconducting films. The energy gap of the superconducting film for the planar inductor (at least part of it) is lower than the energy of photons to be detected. The kinetic inductance of the superconducting film irradiated by the photons is increased, shifting the resonance frequency toward a lower frequency. The frequency shift is proportional to the kinetic inductance fraction, i.e., the ratio of the kinetic inductance to the total inductance of the planar superconducting inductor. In this paper, we thoroughly investigate the kinetic inductance fraction for lumped-element and antenna-coupled MKIDs, which are both made from NbTiN. The detailed simulation, calculation, and measurement results will be presented.
Abstract We have designed and fabricated a superconducting hybrid NbTiN-Al kinetic inductance detector (KID) over a broad band centered at 4.3 THz. The detector sensitivity is characterized by changing the bath temperature in a dark environment. Both amplitude and phase readouts are performed. The measured electrical noise equivalent power for phase readout is about 2.6 × 10−18 W · Hz−0.5 at 200 mK. This ultra-sensitive KID, which enables large arrays with frequency domain multiplexing, is promising for imaging instruments in space-based far-infrared observatories.
While most experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, kinetic-inductance detectors can be very sensitive at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance. We modeled the noise characteristics of the kinetic-inductance detectors made from disordered superconducting Nb, NbC, and MoRe films. Low-phonon transparency of the interface between the superconductor and the substrate causes substantial retrapping of phonons providing high quantum efficiency and the operating time of ∼1 ms at ≈1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation–recombination noise can be as small as ∼10−19 W/Hz at He4 temperatures.
Aluminum lumped-element kinetic inductance detectors (LEKIDs) sensitive to millimeter-wave photons have been shown to exhibit high quality factors, making them highly sensitive and multiplexable. The superconducting gap of aluminum limits aluminum LEKIDs to photon frequencies above 100 GHz. Manganese-doped aluminum (Al-Mn) has a tunable critical temperature and could therefore be an attractive material for LEKIDs sensitive to frequencies below 100 GHz if the internal quality factor remains sufficiently high when manganese is added to the film. To investigate, we measured some of the key properties of Al-Mn LEKIDs. A prototype eight-element LEKID array was fabricated using a 40 nm thick film of Al-Mn deposited on a 500 μm thick high-resistivity, float-zone silicon substrate. The manganese content was 900 ppm, the measured Tc = 694 ± 1mK, and the resonance frequencies were near 150 MHz. Using measurements of the forward scattering parameter S21 at various bath temperatures between 65 and 250 mK, we determined that the Al-Mn LEKIDs we fabricated have internal quality factors greater than 2 × 105, which is high enough for millimeter-wave astrophysical observations. In the dark conditions under which these devices were measured, the fractional frequency noise spectrum shows a shallow slope that depends on bath temperature and probe tone amplitude, which could be two-level system noise. The anticipated white photon noise should dominate this level of low-frequency noise when the detectors are illuminated with millimeter-waves in future measurements. The LEKIDs responded to light pulses from a 1550 nm light-emitting diode, and we used these light pulses to determine that the quasiparticle lifetime is 60 μs.