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arXiv:1701.08461 · Applied Physics Letters

High quality factor manganese-doped aluminum lumped-element kinetic inductance detectors sensitive to frequencies below 100 GHz

G. Jones, B. R. Johnson, M. H. Abitbol, Peter A. R. Ade, S. Bryan, Hsiao-Mei Cho, P. Day, D. Flanigan, K. D. Irwin, Dale Li, Philip D. Mauskopf, H. McCarrick, A. Miller, Y. R. Song, C. Tucker

Published May 29, 2017• 14 citations
arXivHTMLPDF

Abstract

Aluminum lumped-element kinetic inductance detectors (LEKIDs) sensitive to millimeter-wave photons have been shown to exhibit high quality factors, making them highly sensitive and multiplexable. The superconducting gap of aluminum limits aluminum LEKIDs to photon frequencies above 100 GHz. Manganese-doped aluminum (Al-Mn) has a tunable critical temperature and could therefore be an attractive material for LEKIDs sensitive to frequencies below 100 GHz if the internal quality factor remains sufficiently high when manganese is added to the film. To investigate, we measured some of the key properties of Al-Mn LEKIDs. A prototype eight-element LEKID array was fabricated using a 40 nm thick film of Al-Mn deposited on a 500 μm thick high-resistivity, float-zone silicon substrate. The manganese content was 900 ppm, the measured Tc = 694 ± 1mK, and the resonance frequencies were near 150 MHz. Using measurements of the forward scattering parameter S21 at various bath temperatures between 65 and 250 mK, we determined that the Al-Mn LEKIDs we fabricated have internal quality factors greater than 2 × 105, which is high enough for millimeter-wave astrophysical observations. In the dark conditions under which these devices were measured, the fractional frequency noise spectrum shows a shallow slope that depends on bath temperature and probe tone amplitude, which could be two-level system noise. The anticipated white photon noise should dominate this level of low-frequency noise when the detectors are illuminated with millimeter-waves in future measurements. The LEKIDs responded to light pulses from a 1550 nm light-emitting diode, and we used these light pulses to determine that the quasiparticle lifetime is 60 μs.

DOI
10.1063/1.4984105

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Aluminum lumped-element kinetic inductance detectors (LEKIDs) sensitive to millimeter-wave photons have been shown to exhibit high quality factors, making them highly sensitive and multiplexable. The superconducting gap of aluminum limits aluminum LEKIDs to photon frequencies above 100 GHz. Manganese-doped aluminum (Al-Mn) has a tunable critical temperature and could therefore be an attractive material for LEKIDs sensitive to frequencies below 100 GHz if the internal quality factor remains sufficiently high when manganese is added to the film. To investigate, we measured some of the key properties of Al-Mn LEKIDs. A prototype eight-element LEKID array was fabricated using a 40 nm thick film of Al-Mn deposited on a 500 μm thick high-resistivity, float-zone silicon substrate. The manganese content was 900 ppm, the measured Tc = 694 ± 1mK, and the resonance frequencies were near 150 MHz. Using measurements of the forward scattering parameter S21 at various bath temperatures between 65 and 250 mK, we determined that the Al-Mn LEKIDs we fabricated have internal quality factors greater than 2 × 105, which is high enough for millimeter-wave astrophysical observations. In the dark conditions under which these devices were measured, the fractional frequency noise spectrum shows a shallow slope that depends on bath temperature and probe tone amplitude, which could be two-level system noise. The anticipated white photon noise should dominate this level of low-frequency noise when the detectors are illuminated with millimeter-waves in future measurements. The LEKIDs responded to light pulses from a 1550 nm light-emitting diode, and we used these light pulses to determine that the quasiparticle lifetime is 60 μs.
Lumped-element superconducting resonators are a promising technology for their use in millimeter-wave observations and quantum computing applications that require large arrays of extremely sensitive detectors. Among them, lumped-element kinetic inductance detectors (LEKIDs) have shown good performance in the submillimeter band in several earth-based telescopes. In this work, LEKIDs for their use as millimeter-wave receivers of astronomical applications are presented. LEKID arrays using a thin bilayer of superconducting titanium/aluminum (Ti/Al), deposited on the silicon substrate, have been designed and fabricated. The design of a dual-polarization LEKID with the goal of detection at the W-band for two orthogonal polarizations is described and a fabricated array has demonstrated absorption at ambient temperature. Also, an approximate design methodology of the coupling parameter for LEKIDs' readout, essential for dynamic range optimization of the detector under millimeter-wave radiation, is proposed. In addition, the resonance characteristics and coupling factor of the fabricated superconducting resonators using high-quality internal factor Qiunder cryogenic temperatures have been analyzed. The design guidelines in this work are applicable to other LEKID arrays, and the presented superconducting Ti/Al thin-film LEKIDs can be used in future receiver arrays in the millimeter bands.
Future ground-based cosmic microwave background (CMB) experiments will require more than 10510^5105 polarization sensitive pixels covering multiple atmospheric bands. The scientific potential for such an experiment is impressive; however, the technical challenges are daunting: such an instrument will require square meters of focal plane covered in background limited cryogenic detectors and a dramatic increase in readout capability. We are developing novel kinetic inductance detectors (KIDs) optimized for this purpose. These devices use a twin-slot microwave antenna, superconducting Nb transmission line, and a novel coupling scheme that deposits mm-wavelength power onto a high-resistivity meander deposited as the first layer on a bare Si wafer. This architecture allows us to independently adjust the detector and antenna properties and to pursue multi-band designs. We have fabricated superconducting resonators made from atomic layer deposited (ALD) titanium nitride (TiN), with thicknesses ranging from 3 to 40 nm. We find a strong dependence of transition temperature on thickness, from 0.6 to 4.2 K for our thinnest and thickest films, respectively. In dark measurements, we find internal quality factors that range from 10410^4104 to 7×1057\times 10^57×105 depending on film thickness, and kinetic inductance as high as 8 nH/square. The very small volumes and high kinetic inductance make it possible to engineer extremely sensitive detectors with inductor volumes approaching a few cubic microns that operate at readout frequencies of tens to hundreds of MHz. By taking advantage of the large fractional bandwidth available at low frequencies, we expect to achieve multiplexing densities that exceed that of state of the art TES arrays even without further improvements in film quality factor. We will present the characterization of film properties and dark devices, as well as well as initial optical results for antenna coupled single-band and single-pol devices. We will also discuss designs and sensitivity projections for future dual-pol and multi-band arrays ready for deployment in near-future CMB instruments.
As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detector is one of the key performance indicators. Herein a noise power spectrum analysis method is introduced in detail, which can accurately and effectively analyze the noise spectrum of kinetic inductance detector in a wide frequency range. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting the appropriate frequency resolutions for different frequency bands. This method is used to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micromachining processes. We deposite a 25-nm-thick aluminum film on high-resistivity silicon substrate for one device, while place one silicon nitride (SiNx) film on the top and one on the bottom of the aluminum film for another device. It is found that the frequency noise of the device with two silicon nitride films is about 25% to 50% of the bare aluminum device. Using this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor designs. We investigate the noise properties of these devices at different microwave driven power and bath temperatures, and the experimental results show typical two-level system noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detector, and also paves the way to developing low-noise aluminum kinetic inductance detectors for terahertz imaging, photon-counting and energy-resolving applications.
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