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Bulletin of the American Physical Society

Control of NV Center Kinetics and Coherence

Kai‐Mei C. Fu

Published Mar 19, 2021• 0 citations
OpenAlex

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The Nitrogen-Vacancy (NV) color center is a defect of diamond which behaves as an artificial atom hosted in a solid-state matrix. Due to its electron spin properties which can be read-out and manipulated as an elementary quantum system, the NV center has found a wide panel of applications as a qubit for quantum information and as a magnetic field sensor. However these applications require to control the properties of the NV centers and their localization. This doctoral thesis investigates methods allowing us to tailor the properties of NV centers by combining techniques for the implantation of nitrogen atoms and the plasma-assisted (CVD) synthesis of diamond.The manuscript is divided into six chapters. The first chapter summarizes the properties of the NV center which will set our objectives for the NV engineering. The second chapter will describe how arrays of NV centers can be created using Focused Ion Beam implantation. The results open a wide range of applications for the targeted creation of NV centers in diamond structures such as photonic crystals and tips. However the low kinetic energy which is required for achieving implantation within a spot of 10-nm diameter leads to shallow defects which properties are strongly affected by the sample surface. The third chapter investigates how the overgrowth of a diamond layer over implanted NV centers can remove the detrimental influence of the surface. The fourth and fifth chapters describe effective methods for NV center fabrication through the control of the CVD growth conditions of the hosting crystal. Thin layers with high NV doping can be grown and almost perfect control of the orientation of the NV axis can be achieved. With the goal to optimize the spin coherence properties, the sixth chapter investigates how the electron spin of the NV center can be protected from decoherence effects induced by magnetic noise due to the unpolarized spins in the diamond lattice.
We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precise depth control using oxidative etching at 580 °C in air. By successive nanoscale etching, NV centers could be brought close to the diamond surface step by step, which enabled us to track the evolution of the number of NV centers remaining in the chip and to study the depth dependence of coherence times of NV centers with diamond etching. Our results showed that the coherence times of NV centers declined rapidly with the depth reduction in the last about 22 nm before they finally disappeared, which revealed a critical depth for the influence of a rapid fluctuating surface spin bath. Moreover, by using the slow etching method combined with low-energy nitrogen implantation, NV centers with depths shallower than the initially implanted depths can be generated, which are preferred for detecting external spins with higher sensitivity.
The nitrogen-vacancy (NV) center spin represents an appealing candidate for quantum information processing. Besides the widely used microwave control, its coherent manipulation may also be achieved using a laser as mediated by the excited energy levels. Nevertheless, the multiple levels of the excited state of the NV center spin make the coherent transition process become complex and may affect the fidelity of coherent manipulation. Here, we adopt the strategy of optimal quantum control to accelerate coherent-state transfer in the ground-state manifold of the NV center spin using a laser. The results demonstrate improved performance in both the speed and the fidelity of coherent-state transfer which will be useful for optical control of the NV center spin in diamond.