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Bulletin of the American Physical Society

Spectroscopy and coherent control of single nitrogen-vacancy (NV) centers

Meenakshi Dutt, Lilian Childress, Philip Hemmer, Alexander S. Zibrov, Fedor Jelezko, Mikhail D. Lukin

Published May 19, 2006• 0 citations
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We characterize single nitrogen-vacancy (NV) centers created by 10-keVN+ ion implantation into diamond via thin SiO2 layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (<5keV) used to create near-surface NV centers, the screening masks modify the distribution of N+ ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and x-ray photoelectron spectroscopy.
Precise readout of spin states is crucial for any approach toward physical realization of a spin-based quantum computer and for magnetometry with single spins. Here, we report a method to strongly improve the optical readout fidelity of electron spin states associated with single nitrogen-vacancy (NV) centers in diamond. The signal-to-noise ratio is enhanced significantly by performing conditional flip-flop processes between the electron spin and the nuclear spin of the NV center's nitrogen atom. The enhanced readout procedure is triggered by a short preparatory pulse sequence. As the nitrogen nuclear spin is intrinsically present in the system, this method is universally applicable to any nitrogen-vacancy center. Besides the readout method, our studies included coherent control over a single nitrogen nuclear spin for the first time.
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T_{2} can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.