Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T_{2} can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T_{2} can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.
Robust single spin color centers in solid state systems with telecom wavelength emission are vital to quantum photonics and quantum networks. The nitrogen vacancy (NV) centers in silicon carbide (SiC) have become promising platforms for those applications. However, little is known about the detailed optical properties of the NV centers. In this paper, we investigate the photophysics of the single NV centers in 4H-SiC. The results demonstrate that the NV centers comprise three energy-level electronic structures. Particularly, for c -axis NV centers, both the excitation and the emission polarization degrees are larger than 90%. Photon purity and photostability of the single NV centers are maintained at an elevated temperature up to 400 K. These experiments constitute an important step toward using the NV centers in SiC with respect to quantum photonics.
Abstract Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin S = 1/2 for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of ~60 ns and inhomogeneous spin dephasing times of ~0.3 μs, establishing relevance for quantum spin-photon interfacing.
Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.
Defect based qubit systems like the nitrogen vacancy center in diamond have recently emerged as promising candidates for quantum technologies due to their combination of long coherence times, room temperature operation, and robust optical interface. In order to realize many of their proposed applications, defect qubits must be incorporated into scalable devices architectures consisting of photonic, mechanical, or electrical degrees of freedom. Despite much recent progress, many challenges remain for diamond growth and device fabrication. As an alternate approach, we engaged in a search for nitrogen vacancy center analogues in alternative materials with the hope of obtaining a greater degree of control over defect and material properties. Ultimately, we discovered that divacancy-related point defects in all three of the most common forms of silicon carbide- termed 4H, 6H, and 3C- act as analogues to the nitrogen vacancy center in diamond. We chose to focus our research primarily on defects in 3C silicon carbide (termed 'Ky5' defects) because of its availability as a single crystal heteroepitaxial thin film grown on silicon, an advantage that greatly facilitates the fabrication of functional devices. We characterized the spin and optical properties of Ky5 defects in thin film geometries and observed many similarities to the nitrogen vacancy center. We performed the first measurements of spin dynamics in 3C silicon carbide and demonstrate coherent control of defect spins up to room temperature and observe coherence times of up to 22 microseconds. To demonstrate their use in real devices, we designed, fabricated, and characterized photonic crystal cavities in 3C silicon carbide thin films with mode volumes of less than (lambda/n)^3 and Q's as high as 1,500 with integrated Ky5 defects. Additionally, we performed simulations and analysis of the fabricated structures using observed structural imperfections to determine that the Q's are likely limited primarily by the non-vertical structure sidewall angle. Despite the modest Q's of these structures, they can be utilized to generate large local field intensities to enhance optical interactions with Ky5 qubit states within the cavities. We accomplish this by performing cavity enhanced photoluminescence excitation spectroscopy on cavity modes tuned to the zero phonon line of the defects and observe large (as high as 30 times) increases in the luminescence and optically detected magnetic resonance signals originating from the defect states and approximately 2x faster rates of ground state spin initialization. In addition, we use these techniques to probe the photoluminescence dynamics of the Ky5 defects' optical pumping cycle, perform excitation wavelength dependent studies of spin and spectral inhomogeneity, and use the small mode volume and narrowband photoluminescence enhancements of the cavities to observe spectrally distinct subensembles of defects with linewidths as narrow as 25 GHz within the inhomogeneously broadened zero phonon line. Although much is still unknown regarding the properties of these defects, they show great promise as a candidate system for defect qubit based quantum devices and technologies.
Solid-state single-photon sources are the central blocks for many scalable quantum applications including quantum computing, quantum key distributions, and quantum simulations. Over the years, diverse quantum emitters have been studied. This thesis endeavored investigations into single-photon sources in diamond, silicon carbide and gallium nitride in three directions: Firstly, identification of the single-photon sources that have never been reported before and fabrication technique for scalable single germanium vacancy centers in diamond. Telecom wavelength single photon sources have been found in both gallium nitride and silicon carbide. More importantly, those emitters work even at room temperature and are promising for quantum key distribution applications in the future. Secondly, the spin properties study of the single silicon vacancy in diamond: the silicon vacancy optical transition has been coherently controlled in the work. The optical Rabi oscillations in the time domain have been observed. The ultrafast spin control of the silicon vacancy has been also achieved. Thirdly, quantum applications of the divacancy spins in silicon carbide: nano-scale thermometry based on the quantum control of the divacancy spin in silicon carbide has been introduced. Especially, we found a self-protected effect that the transverse strain can protect the spin from the local magnetic field and enables longer coherence time. Finally, some possible directions have been discussed.
This thesis describes a series of experiments on the control of the optical properties of the nitrogen-vacancy (NV) center in diamond, and on control of the electron and nuclear spin states associated with the NV center. The NV center is a fluorescing atomic defect center in diamond, consisting of a substitutional nitrogen atom adjacent to a vacancy in the diamond carbon lattice. The electron spin of the NV center can be initialized and read out optically, and coherently manipulated with high fidelity even at room temperature. This unique combination of properties has attracted much attention to the NV center in recent years for application in quantum information technologies. The experiments in this work focus on exploiting the intrinsic hybrid nature of the NV center. The NV center forms a hybrid spin register, as its electron spin is always coupled to the nuclear spin of its own nitrogen nucleus, and can furthermore be coupled to additional nuclear carbon-13 spins in the diamond. In addition, the electronic spin state can be mapped onto the state of a photon, in principle allowing long range transmission of quantum information and measurement-based entanglement of distant NV center registers. The long-term goal is to achieve a large scale quantum network where the different constituents each perform the task they are most well suited for: the stable nuclear spins store the quantum information, photons transfer quantum information over long distances, and the fast electron spin interfaces between spin and photon states. For measurement-based entanglement of distant NV centers it is of primary importance to maximize the emission and detection of coherent photons emitted by the NV center. Spontaneous emission can be controlled and enhanced by coupling an emitter to a photonic cavity. Chapters 3, 4, and 5 of this thesis describe experiments aimed at maximizing the coherent photon emission rate of an NV center by coupling the NV center to a photonic crystal cavity. One of the main challenges is to position a single NV center into the nanometer-sized cavity mode. Chapter 3 describes the development of a nanopositioning technique, which allows diamond nanocrystals ~50 nm in size containing single NV centers to be placed at arbitrary locations on a chip, with nanometer precision. By using a sharp etched tungsten tip, individual nanocrystals can be picked up, moved and placed under real-time imaging with an electron microscope. We explicitly demonstrate that the unique optical and spin properties of the NV center are conserved by the nanopositioning process. In chapter 4, we apply the nanopositioning technique to couple single NV centers contained in a diamond nanocrystals to gallium phosphide photonic crystal cavities. These cavities resonate in the visible with high quality factors, and are designed to have the lowest energy mode coincide with the zero-phonon line of the NV center. Efficient coupling is evidenced by a strong enhancement of NV center emission at the cavity wavelength. The high quality factor of a photonic crystal cavity is a result of careful design and fabrication. The introduction of a nanocrystal may therefore be expected to have a detrimental effect on the optical properties of a cavity. In chapter 5 we investigate the effect of a nanocrystal on the optical properties of photonic crystal cavities. Our simulations and measurements show that the effect of a nanocrystal is in fact only minor, a promising result for future work on cavity-QED systems in the solid state and with diamond defect centers in particular. Understanding and mitigating decoherence is a key challenge for quantum science and technology. The main source of decoherence for solid-state spin systems is the uncontrolled spin bath environment. Chapter 6 describes experiments that exploit quantum control of the NV center and recently developed dynamical decoupling techniques to study the properties of the surrounding bath of spins belonging to single substitutional nitrogen atoms. The coherence properties of a single NV center are affected by changes in the state of the bath spins, allowing a single NV center to be used as a probe to detect bath spin resonances and study the quantum dynamics of the spin bath. We use quantum control of the spin bath to extend the dephasing time of the NV center, important for the application of the NV center in DC magnetometry. In chapter 7 we describe the development and implementation of decoherence protected quantum gates for the hybrid spin register formed by the NV center electron spin that is coupled to the nuclear spin of its own nitrogen atom. Electron and nuclear spins evolve and decohere at vastly different rates, making it challenging to use such a hybrid system as a fully functional quantum register. We create a universal set of two-qubit quantum gates by integrating dynamical decoupling techniques into the gate operation. We demonstrate the power of our gate design by implementing for the first time Grover's quantum search algorithm on a solid-state spin register.