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Physics Letters A

Identifying different mechanisms in the control of a nitrogen–vacancy center system

Shouzhi Li, Ling Yang, Dewen Cao, Yaoxiong Wang, Feng Shuang, Fang Gao

Published Aug 25, 2017• 2 citations
Publisher
DOI
10.1016/j.physleta.2017.08.031

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Nitrogen-vacancy (NV) centers are point defects in diamond formed by one substitutional nitrogen atom and an adjacent vacancy. Low spectral diffusion is a necessary property for NV centers to be qubit candidates. To characterize differences between naturally formed and ion implanted NV centers, diamond samples were studied that contained both types. The ion implantation process used 15N to be able to differentiate from the 14N naturally formed NV centers. This project focused on identifying the isotope of a single NV center, which is the first step toward understanding differences in their emissive properties. Code was developed to execute, and then automate, the three experiments necessary to identify the isotope of a single NV center: Continuous Wave Optically Detected Magnetic Resonance (CW ODMR), Rabi oscillations, and Pulsed ODMR. The code was implemented on a test sample, where it successfully identified the isotope of several NV centers. The next step in this project is to link the isotope of NV centers to their emissive properties, with a goal of producing reliable qubits for quantum information processing circuits.
Abstract A novel creation procedure for the nitrogen-vacancy (NV) center in diamond is investigated. After shallow nitrogen implantation, a continuous-wave laser is used to induce NV formation, while simultaneously exciting fluorescence to enable live observation. Our investigations imply that a different mechanism than heat induced vacancy diffusion causes the formation of NV centers with this method and we suggest possible alternative pathways which could be responsible, based on the observed properties. Furthermore, we test the procedure for its capabilities for the controlled creation of single centers and show that the emergence of individual centers can be tracked, while achieving sub-micrometer spatial precision.
The charge degree of freedom in solid-state defects fundamentally underpins the electronic spin degree of freedom, a workhorse of quantum technologies. Here we measure, analyze, and control charge-state behavior in individual near-surface nitrogen-vacancy (NV) centers in diamond, where NV^{-} hosts the metrologically relevant electron spin. We find that NV^{-} initialization fidelity varies between individual centers and over time; we alleviate the deleterious effects of reduced NV^{-} initialization fidelity via logic-based initialization. Importantly, we also show that NV^{-} can ionize in the dark on experimentally relevant timescales, and we introduce measurement protocols that mitigate the compromising effects of charge conversion on spin measurements. We identify tunneling to a single local electron trap as the mechanism for ionization in the dark, and we develop novel NV-assisted techniques to control and read out the trap charge state. Our understanding and command of the NV's local electrostatic environment will simultaneously guide materials design and provide unique functionalities with NV centers.