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International Conference on Solid State Devices and Materials (SSDM)

Quantum computing with silicon and germanium: hot and fast

Menno Veldhorst

Published Sep 29, 2020• 0 citations
Publisher
DOI
10.7567/ssdm.2020.i-6-01

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Silicon-germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to electro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here, we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 μs, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state-of-the-art performance of superconducting quantum circuits.
Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) typically based on niobium nitride (NbN) operated at a temperature <4 K. This paper proposes and analyzes 300 K waveguide-integrated germanium–silicon (GeSi) single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of NbN SNSPDs in a series of metrics for PQC with a reasonable time-gating window. These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially-multiplexed M-fold-waveguide array of M GeSi SPADs. Using on-chip waveguided spontaneous four-wave mixing sources and waveguided field-programmable interferometer mesh circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture.