Silicon-germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to electro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here, we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 μs, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state-of-the-art performance of superconducting quantum circuits.
Silicon-germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to electro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here, we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 μs, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state-of-the-art performance of superconducting quantum circuits.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux-dependent interference between the supercurrents of two superconductor-insulator-superconductor (S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materials opens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top-down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current and the normal state resistance . The devices are estimated to have a high-transparency superconductor-semiconductor interface, as demonstrated by the high product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency , internal quality factor, and coupling quality factor from the transmission coefficient. Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words, gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the element, which can open up another possibility toward protected qubits.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux dependent interference between the supercurrents of two superconductor-insulator superconductor(S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materialsopens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current (IC) and the normal state resistance (RN). The devices are estimated to have a high-transparency superconductor/semiconductor interface, as demonstrated by the high ICRN product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency (fr), internal quality factor (Qi), and coupling quality factor (Qc) from the transmission coefficient (S21). Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words,gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the cos 2φ element, which can open up another possibility toward protected qubits.
We present a flip-chip-based sensing scheme to measure effective microwave losses associated with target materials for quantum technologies, without requiring any device fabrication on the material under test. Using this approach, we quantify the microwave losses of a strain-engineered Ge/SiGe quantum well heterostructure and investigate losses arising from its Ge substrate and intermediate layers. The quality factors of the fabricated microwave resonators agree with the losses of dielectric materials independently extracted from flip-chip sensing measurements. We further study the superconductor platinum silicon germanide (PtSiGe) prepared by thermal reaction with a deposited Pt film, finding high microwave losses that limit the suitability of the films studied here as the sole superconductor for high-quality resonator applications. By coating Pt with Nb prior to the reaction, we observe a substantial reduction in microwave loss and a nearly three-fold enhancement of the transport critical temperature. The temperature dependence of the microwave loss is consistent with gap inhomogeneity in both superconducting films. These results identify constraints on material choices, provide design guidance for microwave circuits on planar Ge heterostructures, and demonstrate a fast-turnaround testing method for new materials for superconducting quantum circuits.
Abstract Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe2 that achieve a quality factor Q > 105. This value sets an upper bound that corresponds to a resistance of ⩽ 192 μ Ω when considering the additional loss introduced by integrating NbSe2 into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.
Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times T 1 up to 119 ns, and Ramsey coherence times T 2 * up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al. Nat. Commun. 2024, 15, 6400] using similar Ge/SiGe heterostructures, thereby validating a novel platform for the development of gatemons and parity-protected cos(2ϕ) qubits.
State-of-the-art transmon qubits rely on large capacitors, which systematically improve their coherence due to reduced surface-loss participation. However, this approach increases both the footprint and the parasitic cross-coupling and is ultimately limited by radiation losses---a potential roadblock for scaling up quantum processors to millions of qubits. In this work we present transmon qubits with sizes as low as $36\phantom{\rule{0.2em}{0ex}}\ifmmode\times\else\texttimes\fi{}\phantom{\rule{0.2em}{0ex}}39\phantom{\rule{0.2em}{0ex}}\text{\ensuremath{\mu}}{\mathrm{m}}^{2}$ with $\ensuremath{\gtrsim}100$-nm-wide vacuum-gap capacitors that are micromachined from commercial silicon-on-insulator wafers and shadow evaporated with aluminum. We achieve a vacuum participation ratio up to 99.6% in an in-plane design that is compatible with standard coplanar circuits. Qubit relaxation-time measurements for small gaps with high zero-point electric field variance of up to 22 V/m reveal a double exponential decay indicating comparably strong qubit interaction with long-lived two-level systems. The exceptionally high selectivity of up to 20 dB to the superconductor-vacuum interface allows us to precisely back out the sub-single-photon dielectric loss tangent of aluminum oxide previously exposed to ambient conditions. In terms of future scaling potential, we achieve a ratio of qubit quality factor to a footprint area equal to $20\phantom{\rule{0.2em}{0ex}}\text{\ensuremath{\mu}}{\mathrm{m}}^{\ensuremath{-}2}$, which is comparable with the highest T1 devices relying on larger geometries, a value that could improve substantially for lower surface-loss superconductors.