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OSA Quantum 2.0 Conference

Quantum Interconnect Technologies based on Epitaxial Rare-earth Doped Materials

Tian Zhong, Yizhong Huang, Christina Wicker, Rikuto Fukumori, Hong Wei Qiao, Manish Kumar Singh

Published Jan 1, 2020• 0 citations
Publisher

Abstract

We develop a nanophotonic platform for quantum interconnect technologies based on epitaxial Er3+:Y2O3 thin films on silicon. Long-lived rare-earth qubits in suspended single crystal membranes and ultra-small heterostructure photonic cavities enable functional telecom quantum nodes. Comments and questions should be directed to Tian Zhong (e-mail: tzh@uchicago.edu ).

DOI
10.1364/quantum.2020.qth6b.1

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We develop a nanophotonic platform for quantum interconnect technologies based on epitaxial Er3+:Y2O3 thin films on silicon. Long-lived rare-earth qubits in suspended single crystal membranes and ultra-small heterostructure photonic cavities enable functional telecom quantum nodes. Comments and questions should be directed to Tian Zhong (e-mail: tzh@uchicago.edu ).
Quantum nanophotonics interfacing optical photons with coherent atomic spins have the potential to revolutionize secure communications, ultra-scale sensing, distributed quantum computing, and enhanced metrology, but currently lack scalable material and device platform necessary for building robust quantum light-matter interfaces. The trivalent rare-earth ion such as erbium (Er3+) is a promising candidate for quantum interfaces because of its narrow optical transition as well as a long spin coherence time. Here, we present an epitaxial Er3+:Y2O3 on silicon platform for scalable quantum light-matter interconnect, enabling efficient spin-photon interfaces based on individual rare-earth qubits and quantum transduction via ensembles of ions.
Coherent quantum devices play a central role in quantum science and engineering. Rare-earth ions such as erbium in solids feature numerous 4f- intra-shell transitions that are effectively shielded from their crystalline surroundings by closed outer shells, allowing for long spin coherence times and narrow optical transitions. Recent ensemble experiments have established the rare-earth doped crystals as the leading materials for optical quantum memories. However, the development of large-scale quantum devices based on rare-earth doped materials has remained a challenge. Here we describe a scalable quantum photonic platform based on epitaxially grown oxide thin films doped with trivalent ions on silicon substrates. The platform builds upon the recent developments of high quality epitaxial rare-earth doped oxides on silicon, and highlights the integration of quantum coherent materials with existing silicon technologies for ultimate device scalability. The proposed device platform builds upon our capability to epitaxially grow high quality, near-lattice-matched Y2O3 thin films on silicon. The epitaxial thin film is of high structural quality and offers several distinct advantages: (1) significantly less optical loss and better quantum emitter coherence; (2) atomic precision placement of rare-earth emitters (via delta doping) with respect to the photonic mode for controllable ion-photon coupling; (3) scalable top-down device fabrication using standard lithography and etching techniques; (4) heterogeneous integration with silicon takes full advantage of existing silicon photonics technologies for routing, tuning, and modulation of the quantum emission from rare-earth ions.