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IEEE Photonics Conference

Nanophotonic quantum network nodes based on epitaxial rare-earth on silicon heterostructures

Christina Wicker, Yizhong Huang, Hong Wei Qiao, Manish Kumar Singh, Abhinav Prakash, Alan Dibos, Supratik Guha, Tian Zhong

Published Sep 1, 2020• 1 citation
Publisher

Abstract

We present the development of nanophotonic quantum nodes based on an epitaxial Er3+:Y2O3(yttria) on silicon platform. Heterostructure photonic cavities with ultra-small mode volumes couple to individual erbium qubits at the telecom wavelength. We measure silicon cavities with fabrication-limited Qcav~400,000 and develop yttria nanofabricaton processes.

DOI
10.1109/ipc47351.2020.9252356

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Mar 4, 2015•1 citation
We present the development of nanophotonic quantum nodes based on an epitaxial Er3+:Y2O3(yttria) on silicon platform. Heterostructure photonic cavities with ultra-small mode volumes couple to individual erbium qubits at the telecom wavelength. We measure silicon cavities with fabrication-limited Qcav~400,000 and develop yttria nanofabricaton processes.
Quantum nanophotonics interfacing optical photons with coherent atomic spins have the potential to revolutionize secure communications, ultra-scale sensing, distributed quantum computing, and enhanced metrology, but currently lack scalable material and device platform necessary for building robust quantum light-matter interfaces. The trivalent rare-earth ion such as erbium (Er3+) is a promising candidate for quantum interfaces because of its narrow optical transition as well as a long spin coherence time. Here, we present an epitaxial Er3+:Y2O3 on silicon platform for scalable quantum light-matter interconnect, enabling efficient spin-photon interfaces based on individual rare-earth qubits and quantum transduction via ensembles of ions.
Coherent quantum devices play a central role in quantum science and engineering. Rare-earth ions such as erbium in solids feature numerous 4f- intra-shell transitions that are effectively shielded from their crystalline surroundings by closed outer shells, allowing for long spin coherence times and narrow optical transitions. Recent ensemble experiments have established the rare-earth doped crystals as the leading materials for optical quantum memories. However, the development of large-scale quantum devices based on rare-earth doped materials has remained a challenge. Here we describe a scalable quantum photonic platform based on epitaxially grown oxide thin films doped with trivalent ions on silicon substrates. The platform builds upon the recent developments of high quality epitaxial rare-earth doped oxides on silicon, and highlights the integration of quantum coherent materials with existing silicon technologies for ultimate device scalability. The proposed device platform builds upon our capability to epitaxially grow high quality, near-lattice-matched Y2O3 thin films on silicon. The epitaxial thin film is of high structural quality and offers several distinct advantages: (1) significantly less optical loss and better quantum emitter coherence; (2) atomic precision placement of rare-earth emitters (via delta doping) with respect to the photonic mode for controllable ion-photon coupling; (3) scalable top-down device fabrication using standard lithography and etching techniques; (4) heterogeneous integration with silicon takes full advantage of existing silicon photonics technologies for routing, tuning, and modulation of the quantum emission from rare-earth ions.
With an assortment of narrow line-width transitions spanning the visible and IR spectrum and long spin coherence times, rare-earth doped crystals are the leading material system for solid-state quantum memories. Integrating these materials in an on-chip optical platform would create opportunities for highly integrated light-matter interfaces for quantum communication and quantum computing. Nano-photonic resonators with high quality factors and small mode volumes are required for efficient on-chip coupling to the small dipole moment of rare-earth ion transitions. However, direct fabrication of optical cavities in these crystals with current nanofabrication techniques is difficult and unparallelized, as either exotic etch chemistries or physical milling processes are required. We fabricated hybrid devices by mechanically transferring a nanoscale membrane of gallium arsenide (GaAs) onto a neodymium-doped yttrium silicon oxide (Y2SiO5) crystal and then using electron beam lithography and standard III-V dry etching to pattern nanobeam photonic crystal cavities and ring resonator cavities, a technique that is easily adapted to other frequency ranges for arbitrary dopants in any rare earth host system. Single crystalline GaAs was chosen for its low loss and high refractive index at the transition wavelength. We demonstrated the potential to evanescently couple between the cavity field and the 883 nm 4I9/2- 4F3/2 transition of nearby neodymium impurities in the host crystal by examining transmission spectra through a waveguide coupled to the resonator with a custom-built confocal microscope. The prospects and requirements for using this system for scalable quantum networks are discussed.