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Conference on Lasers and Electro-Optics

Epitaxial Rare-Earth on Silicon as a Scalable Quantum Photonic Platform

Yizhong Huang, Manish Kumar Singh, Rikuto Fukumori, Natasha Tomm, Christina Wicker, Abhinav Prakash, Tijana Rajh, Richard John Warburton, Supratik Guha, Tian Zhong

Published Jan 1, 2020• 2 citations
Publisher

Abstract

We present an epitaxial Er3+:Y2O3/silicon material platform for scalable quantum photonic devices. We discuss a system integrating suspended Er3+:Y2O3 membranes with a fiber Fabry-Perot cavity for coherent spectroscopy enabling quantum memory and transduction.
DOI
10.1364/cleo_qels.2020.fw3c.3

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Coherent quantum devices play a central role in quantum science and engineering. Rare-earth ions such as erbium in solids feature numerous 4f- intra-shell transitions that are effectively shielded from their crystalline surroundings by closed outer shells, allowing for long spin coherence times and narrow optical transitions. Recent ensemble experiments have established the rare-earth doped crystals as the leading materials for optical quantum memories. However, the development of large-scale quantum devices based on rare-earth doped materials has remained a challenge. Here we describe a scalable quantum photonic platform based on epitaxially grown oxide thin films doped with trivalent ions on silicon substrates. The platform builds upon the recent developments of high quality epitaxial rare-earth doped oxides on silicon, and highlights the integration of quantum coherent materials with existing silicon technologies for ultimate device scalability. The proposed device platform builds upon our capability to epitaxially grow high quality, near-lattice-matched Y2O3 thin films on silicon. The epitaxial thin film is of high structural quality and offers several distinct advantages: (1) significantly less optical loss and better quantum emitter coherence; (2) atomic precision placement of rare-earth emitters (via delta doping) with respect to the photonic mode for controllable ion-photon coupling; (3) scalable top-down device fabrication using standard lithography and etching techniques; (4) heterogeneous integration with silicon takes full advantage of existing silicon photonics technologies for routing, tuning, and modulation of the quantum emission from rare-earth ions.
Quantum photonics provides a powerful toolbox with vast applications ranging from quantum simulation, photonic information processing, all optical universal quantum computation, secure quantum internet as well as quantum enhanced sensing. Many of these applications require the integration of several complex optical elements and material systems which pose a challenge to scalability. It is essential to integrate linear and non-linear photonics on a chip to tackle this issue leading to more compact, high bandwidth devices. In this thesis we demonstrate a pathway to achieving several components in the quantum photonic toolbox on the same integrated photonic platform. We focus particularly on two of the more nontrivial components, a single photon source and an integrated quantum light-matter interface. We address the problem of a scalable, chip integrated, fast single photon source, by using atomically thin layers of 2D materials interfaced with plasmonic waveguides. We further embark on the challenge of creating a new material system by integrating rare earth ions with the emerging commercial platform of thin film lithium niobate on insulator. Rare earth ions have found widespread use in classical and quantum information processing. However, these are traditionally doped in bulk crystals which hinder their scalability. We demonstrate an integrated photonic interface for rare earth ions in thin film lithium niobate that preserves the optical and coherence properties of the ions. This combination of rare earth ions with the chip-scale active interface of thin film lithium niobate opens a plethora of opportunities for compact optoelectronic devices. As an immediate application we demonstrate an integrated optical quantum memory with a rare earth atomic ensemble in the thin film. The new light matter interface in thin film lithium niobate acts as a key enabler in an already rich optical platform representing a significant advancement in the field of integrated quantum photonics.