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Quantum Nanophotonic Materials, Devices, and Systems

A heteroepitaxial architecture for rare-earth quantum light-matter interconnects

Tian Zhong

Published Jul 30, 2021• 0 citations
Publisher

Abstract

Quantum nanophotonics interfacing optical photons with coherent atomic spins have the potential to revolutionize secure communications, ultra-scale sensing, distributed quantum computing, and enhanced metrology, but currently lack scalable material and device platform necessary for building robust quantum light-matter interfaces. The trivalent rare-earth ion such as erbium (Er3+) is a promising candidate for quantum interfaces because of its narrow optical transition as well as a long spin coherence time. Here, we present an epitaxial Er3+:Y2O3 on silicon platform for scalable quantum light-matter interconnect, enabling efficient spin-photon interfaces based on individual rare-earth qubits and quantum transduction via ensembles of ions.

DOI
10.1117/12.2598676

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Quantum nanophotonics interfacing optical photons with coherent atomic spins have the potential to revolutionize secure communications, ultra-scale sensing, distributed quantum computing, and enhanced metrology, but currently lack scalable material and device platform necessary for building robust quantum light-matter interfaces. The trivalent rare-earth ion such as erbium (Er3+) is a promising candidate for quantum interfaces because of its narrow optical transition as well as a long spin coherence time. Here, we present an epitaxial Er3+:Y2O3 on silicon platform for scalable quantum light-matter interconnect, enabling efficient spin-photon interfaces based on individual rare-earth qubits and quantum transduction via ensembles of ions.
Coherent quantum devices play a central role in quantum science and engineering. Rare-earth ions such as erbium in solids feature numerous 4f- intra-shell transitions that are effectively shielded from their crystalline surroundings by closed outer shells, allowing for long spin coherence times and narrow optical transitions. Recent ensemble experiments have established the rare-earth doped crystals as the leading materials for optical quantum memories. However, the development of large-scale quantum devices based on rare-earth doped materials has remained a challenge. Here we describe a scalable quantum photonic platform based on epitaxially grown oxide thin films doped with trivalent ions on silicon substrates. The platform builds upon the recent developments of high quality epitaxial rare-earth doped oxides on silicon, and highlights the integration of quantum coherent materials with existing silicon technologies for ultimate device scalability. The proposed device platform builds upon our capability to epitaxially grow high quality, near-lattice-matched Y2O3 thin films on silicon. The epitaxial thin film is of high structural quality and offers several distinct advantages: (1) significantly less optical loss and better quantum emitter coherence; (2) atomic precision placement of rare-earth emitters (via delta doping) with respect to the photonic mode for controllable ion-photon coupling; (3) scalable top-down device fabrication using standard lithography and etching techniques; (4) heterogeneous integration with silicon takes full advantage of existing silicon photonics technologies for routing, tuning, and modulation of the quantum emission from rare-earth ions.
Optically active solid-state spin qubits thrive as an appealing technology for quantum interconnects and quantum networks, thanks to their atomic size, scalable synthesis, long-lived coherence, and ability to coherently interface with flying qubits. Trivalent erbium dopants, in particular, emerge as an attractive candidate due to their emission in the telecom C band and shielded 4f intra-shell spin and optical transitions. Nevertheless, prevailing top-down architectures for rare-earth qubits and devices have not yet achieved simultaneous long optical and spin coherence, which is necessary for efficient long-distance quantum networks. Here, we demonstrate dual Er3+ telecom spin-photon interfaces in two distinct lattice symmetry sites within an epitaxial thin-film platform. By leveraging high matrix crystallinity, controlled proximity of dopants to surfaces, and exploiting host lattice symmetry, we simultaneously achieve kilohertz-level optical linewidth in a strongly symmetry-protected site, and erbium qubit spin coherence times exceeding 10 milliseconds. Additionally, we realize single-shot readout and microwave coherent control of erbium qubits in a fiber-integrated package, enabling rapid deployment and scalability. These advancements highlight the significant potential of high-quality rare-earth qubits and quantum memories assembled using a bottom-up method, paving the way for scalable development of quantum light-matter interfaces tailored for telecommunication quantum networks. Erbium quantum emitters operating in the telecom C band are promising for spin-photon interfaces but achieving both optical and spin coherence has been challenging. Gupta et al. report two types of erbium dopants in epitaxial Y2O3 thin films occupying distinct lattice sites and exhibiting long spin and optical coherence times
Rare-earth ion defects in solid-state hosts have emerged as a promising candidate for emissive quantum memories owing to their inherent spin–photon interface and long optical and spin coherence times. Erbium (Er3+) in particular has optical transitions in the C-band making it well suited to the use of existing telecom technology infrastructure. In this work, we present a platform to integrate rare-earth ions into standard silicon photonic circuits. Erbium is co-deposited in CMOS-compatible TiO2 host films onto SOI and patterned into high Purcell factor photonic crystal cavities. Purcell factors in excess of 500 are observed and transient spectral hole burning and photoluminescence excitation scans reveal homogeneous linewidths below 15 MHz. Additionally, we show that photonic wirebonding can provide a solution for low-loss and thermally stable fiber-to-chip coupling.