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Improved Nb SIS devices for heterodyne mixers between 700GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer

M. Westig, Stefan Selig, Karl Jacobs, T. M. Klapwijk, Cornelia E. Honingh

Published Jan 1, 2013• 5 citations
OpenAlex

Abstract

In this paper, we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by quasiparticle trapping is removed by inserting a normal metal layer of gold between the niobium junction and the niobium-titanium-nitride layer. We analyze in dc-characterization measurements the cooling of the nonequilibrium quasiparticles in various device geometries having different gold layer thickness and shape. Our work is concluded with remarks for future heterodyne mixer experiments using our device technology. (C) 2013 AIP Publishing LLC.

Related papers

Improved Nb SIS devices for heterodyne mixers between 700 GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer

M. Westig, S. Selig, K. Jacobs +2 more

In this paper, we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by quasiparticle trapping is removed by inserting a normal metal layer of gold between the niobium junction and the niobium-titanium-nitride layer. We analyze in dc-characterization measurements the cooling of the nonequilibrium quasiparticles in various device geometries having different gold layer thickness and shape. Our work is concluded with remarks for future heterodyne mixer experiments using our device technology.

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Different shape normal metal interlayers between niobium based SIS junctions and niobium titanium nitride leads and their influence on the electron temperature

Stefan Selig, M. Westig, Karl Jacobs +1 more

In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.

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In this paper we present the experimental realization of a Nb tunnel junction connected to a high-gap superconducting NbTiN embedding circuit. We investigate relaxation of nonequilibrium quasiparticles in a small volume Au layer between the Nb tunnel junction and the NbTiN circuit. We find a saturation in the effective heat-transfer coefficient consistent with a simple theoretical model. This saturation is determined by the thickness of the Au layer. Our findings are important for the design of the ideal Au energy relaxation layer for practical SIS heterodyne mixers and we suggest two geometries, one, using a circular Au layer and, two, using a half-circular Au layer. Our work is concluded with an outlook of our future experiments.

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We describe a 1 THz quasioptical SIS mixer which uses a twin-slot antenna, an antireflection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double-sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz.

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T. M. Klapwijk, Pieter Dieleman, M. W. M. de Graauw

In recent years, responding to the need of the astronomical community, superconductor - insulator - superconductor (SIS) mixers have been developed to operate at THz frequencies. Best results are obtained by using niobium-based tunnel junctions with well-matched low-loss normal metal striplines, which are found to be less lossy than niobium striplines operated above the gap frequency of niobium (700 GHz). Niobium nitride tunnel junctions with a magnesium oxide tunnel barrier, although having reasonable-quality current - voltage characteristics, have been found to be unsuitable owing to excess shot noise resulting from pinholes in the barrier.

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Fabrication of Nb/Al-N/sub x//NbTiN junctions for SIS mixer applications

B. Bumble, Henry George LeDuc, Jeff A. Stern +1 more

We discuss fabrication and characteristics of superconductor-insulator-superconductor (SIS) junctions which typically exhibit a 3.5 mV sum-gap voltage. Junctions have a sub-gap to normal state resistance ratio of R/sub SG//R/sub N/=27 for resistance-area products down to R/sub N/A=8 /spl Omega/ /spl mu/m/sup 2/ and high quality junctions have been produced with RNA products as low as 4 /spl Omega/ /spl mu/m/sup 2/. The device structure incorporates a Nb base electrode, a tunnel barrier formed by plasma nitridation of a thin Al proximity layer, and a NbTiN counter-electrode. Results for all Nb junctions with high current density aluminum-nitride barriers are also shown. Nitridation of the aluminum layer is investigated by control of the dc floating potential on a separate rf driven electrode in the vacuum process chamber. Devices are integrated to a mixer antenna structure incorporating NbTiN as a ground plane. The wire circuit layer can be either normal metal or NbTiN. Annealing results show improved I-V characteristics with increased RNA products. Recent receiver measurements employing these junctions exhibit low noise performance up to 900 GHz.

IEEE Transactions on Applied Superconductivity•Mar 1, 2001•53 citations
In this paper, we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by quasiparticle trapping is removed by inserting a normal metal layer of gold between the niobium junction and the niobium-titanium-nitride layer. We analyze in dc-characterization measurements the cooling of the nonequilibrium quasiparticles in various device geometries having different gold layer thickness and shape. Our work is concluded with remarks for future heterodyne mixer experiments using our device technology. (C) 2013 AIP Publishing LLC.
In this paper, we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by quasiparticle trapping is removed by inserting a normal metal layer of gold between the niobium junction and the niobium-titanium-nitride layer. We analyze in dc-characterization measurements the cooling of the nonequilibrium quasiparticles in various device geometries having different gold layer thickness and shape. Our work is concluded with remarks for future heterodyne mixer experiments using our device technology.
In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.
In this paper we present the experimental realization of a Nb tunnel junction connected to a high-gap superconducting NbTiN embedding circuit. We investigate relaxation of nonequilibrium quasiparticles in a small volume Au layer between the Nb tunnel junction and the NbTiN circuit. We find a saturation in the effective heat-transfer coefficient consistent with a simple theoretical model. This saturation is determined by the thickness of the Au layer. Our findings are important for the design of the ideal Au energy relaxation layer for practical SIS heterodyne mixers and we suggest two geometries, one, using a circular Au layer and, two, using a half-circular Au layer. Our work is concluded with an outlook of our future experiments.
We describe a 1 THz quasioptical SIS mixer which uses a twin-slot antenna, an antireflection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double-sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz.
In recent years, responding to the need of the astronomical community, superconductor - insulator - superconductor (SIS) mixers have been developed to operate at THz frequencies. Best results are obtained by using niobium-based tunnel junctions with well-matched low-loss normal metal striplines, which are found to be less lossy than niobium striplines operated above the gap frequency of niobium (700 GHz). Niobium nitride tunnel junctions with a magnesium oxide tunnel barrier, although having reasonable-quality current - voltage characteristics, have been found to be unsuitable owing to excess shot noise resulting from pinholes in the barrier.
We discuss fabrication and characteristics of superconductor-insulator-superconductor (SIS) junctions which typically exhibit a 3.5 mV sum-gap voltage. Junctions have a sub-gap to normal state resistance ratio of R/sub SG//R/sub N/=27 for resistance-area products down to R/sub N/A=8 /spl Omega/ /spl mu/m/sup 2/ and high quality junctions have been produced with RNA products as low as 4 /spl Omega/ /spl mu/m/sup 2/. The device structure incorporates a Nb base electrode, a tunnel barrier formed by plasma nitridation of a thin Al proximity layer, and a NbTiN counter-electrode. Results for all Nb junctions with high current density aluminum-nitride barriers are also shown. Nitridation of the aluminum layer is investigated by control of the dc floating potential on a separate rf driven electrode in the vacuum process chamber. Devices are integrated to a mixer antenna structure incorporating NbTiN as a ground plane. The wire circuit layer can be either normal metal or NbTiN. Annealing results show improved I-V characteristics with increased RNA products. Recent receiver measurements employing these junctions exhibit low noise performance up to 900 GHz.