Integrated quantum photonics is a very active field of quantum information science. In particular, the maturity of semiconductor technology offers a huge potential in terms of ultra-compact devices including the generation, manipulation and detection of many quantum bits. In these last years, spectacular progresses have been done using different material platforms, as AlGaAs, Silicon-On-Insulator, Silica-On-Silicon; important results have also been obtained on the integration of semiconductor waveguides and superconducting single photon detectors.
Integrated quantum photonics is a very active field of quantum information science. In particular, the maturity of semiconductor technology offers a huge potential in terms of ultra-compact devices including the generation, manipulation and detection of many quantum bits. In these last years, spectacular progresses have been done using different material platforms, as AlGaAs, Silicon-On-Insulator, Silica-On-Silicon; important results have also been obtained on the integration of semiconductor waveguides and superconducting single photon detectors.
Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.
Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.
The capability of realizing quantum photonics implementations on-chip will have a strong impact on several aspects of quantum computation and information processing. The implementation of large scale integrated quantum photonic technologies requires on-chip reconfigurable waveguide circuits as well as single-photon sources and detectors. Many successes have been made in recent years to demonstrate complex quantum circuits in many material platforms. Among all these platforms, the Silicon-on-Insulator (SOI) platform is outstanding as it is well developed for classical applications and therefore deploys a high component density, mature fabrication techniques and compatibility with the telecom regime and the complementary metal-oxide-semiconductor (CMOS) technology. However, the lack of on-demand non-classical light sources, directly incorporated in silicon chips, forces the use of nonlinear processes to generate non-classical light states: the probabilistic nature of the emission process sets a limit in the maximally achievable experimental complexity. The use of on-demand sources will have a strong impact on the device’s scalability.
Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.
One of the main issues in the domain of quantum information and communication is the generation, manipulation and detection of several qubits on a single chip. Several approaches are currently investigated for the implementation of qubits on different types of physical supports and a variety of quantum information technologies are under development: for quantum memories, spectacular advances have been done on trapped atoms and ions, while to transmit information, photons are the ideal support thanks to their high speed of propagation and their almost immunity against decoherence. My thesis work has been focused on the conception, fabrication and characterization of a miniaturized semiconductor source of entangled photons, working at room temperature and telecom wavelengths. First the theoretical concepts relevant to understand the work are described (chapter 1). Then the conception and fabrication procedures are given (chapter 2). Chapter 3 presents the optoelectronics characterization of the device under electrical pumping, and chapter 4 the results on the optical losses measurements and the nonlinear optical characterization (second harmonic generation, spontaneous parametric down conversion and joint spectral intensity reconstruction). Chapters 5 and 6 focus on the characterization of the quantum state generated by a passive sample (demonstration of indistinguishability and energy-time entanglement) and its utilization in a multi- user quantum key distribution protocol (polarization entanglement). Finally the work on the first electrically driven photon pairs source emitting in the telecom range and working at room temperature is presented (chapter 7).
There has been a strong interest to translate optical quantum technologies into photonic integrated circuits (PICs) as they could provide a stable, compact, and potentially scalable architecture for generating, manipulating, and measuring optical quantum states. Among the various PIC technologies that are being developed, silicon-on-insulator (SOI) PICs have several advantages, including technologically mature foundry fabrication, CMOS-process integration, and high-performance switches, modulators, polarization control, filters, and other essential optical components. However, several components are missing that are needed for quantum information processing tasks. Here, we describe recent progress on augmenting SOI PICs with essential capabilities for photonic quantum technologies — entangled photon sources, single photon detectors, and reconfigurable linear optics unitary transformations — and focus on two central application areas: quantum communications and quantum simulation.