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arXiv:2602.11421 · Optica

Nonlinear integrated quantum photonics with AlGaAs

F. Baboux, G. Moody, S. Ducci

quant-phcond-mat.mes-hallphysics.opticsSubmitted Feb 11, 2026• Announced Feb 13, 2026• 64 citations
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Abstract

Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.

Journal reference
Optica 10, 917 (2023)
DOI
10.1364/OPTICA.481385

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Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.
Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.
Integrated photonics is playing a key role in the development of quantum technologies covering applications ranging from quantum communication to computing and from simulations to sensing. In this context, material platforms enabling the chip-scale integration of quantum components are a key issue on the way towards real-world and large-scale technological implementations. In this paper, we review our last achievements on AlGaAs Bragg reflection waveguides emitting nonclassical states of light by spontaneous parametric down conversion. The choice of this platform combines the advantages of a mature fabrication technology, room temperature operation, emission in the telecom C-Band and compliance with electrical injection. We demonstrate the ability of these devices to generate a large variety of quantum states spanning from biphoton frequency combs to broadband polarization entanglement enabling promising applications in quantum processing as well as flexible quantum networks.
The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of nonclassical light in a phase-stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single-photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this paper, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters.
Photonic quantum technologies represent a promising platform for applications ranging from long-distance secure communications to the simulation of complex phenomena. Among the different material platforms, direct bandgap semiconductors offer a wide range of functionalities opening promising perspectives for the implementation of future quantum technologies. In this paper, we review our progress on the generation and manipulation of quantum states of light in nonlinear AlGaAs chips and their use in quantum networks.
Photonic quantum technologies are a promising platform for applications ranging from long-distance secure communications to the simulation of complex phenomena. Among the different material platforms direct bandgap semiconductors offer a wide range of functionalities opening promising perspectives for the implementation of future quantum technologies. In this talk, I review our progress on the generation and manipulation of quantum states of light in nonlinear AlGaAs chips and their use in quantum networks.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and direct bandgap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their vertical routing to an adhesively-bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband (> 40 nm) telecom photons by type 0 and type 2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10510^5105 s−1s^{-1}s−1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5 nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on-chip, within an hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies.