Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Modern Optics

Photon pair sources in AlGaAs: from electrical injection to quantum state engineering

Claire Autebert, Guillaume Boucher, Fabien Boitier, A. Eckstein, Iván Favero, Giuseppe Leo, S. Ducci

Published Jan 15, 2015• 14 citations
Publisher

Abstract

Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.

DOI
10.1080/09500340.2014.1000412

Related papers

Electrically Injected Photon-Pair Source at Room Temperature

Fabien Boitier, Adeline Orieux, Claire Autebert +7 more

One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57 μm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×10(-11) pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.

arXiv:1312.6137•Physical Review Letters•May 7, 2014•113 citations

Nonlinear integrated quantum photonics with AlGaAs

F. Baboux, G. Moody, S. Ducci

Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.

quant-pharXiv:2602.11421•Optica•Feb 13, 2026•64 citations

Nonlinear Quantum Photonics With AlGaAs Bragg-Reflection Waveguides

Félicien Appas, Othmane Meskine, Aristide Lemaître +4 more

Integrated photonics is playing a key role in the development of quantum technologies covering applications ranging from quantum communication to computing and from simulations to sensing. In this context, material platforms enabling the chip-scale integration of quantum components are a key issue on the way towards real-world and large-scale technological implementations. In this paper, we review our last achievements on AlGaAs Bragg reflection waveguides emitting nonclassical states of light by spontaneous parametric down conversion. The choice of this platform combines the advantages of a mature fabrication technology, room temperature operation, emission in the telecom C-Band and compliance with electrical injection. We demonstrate the ability of these devices to generate a large variety of quantum states spanning from biphoton frequency combs to broadband polarization entanglement enabling promising applications in quantum processing as well as flexible quantum networks.

Journal of Lightwave Technology•Oct 13, 2022•26 citations

AlGaAs photonic devices: from quantum state generation to quantum communications

Claire Autebert

One of the main issues in the domain of quantum information and communication is the generation, manipulation and detection of several qubits on a single chip. Several approaches are currently investigated for the implementation of qubits on different types of physical supports and a variety of quantum information technologies are under development: for quantum memories, spectacular advances have been done on trapped atoms and ions, while to transmit information, photons are the ideal support thanks to their high speed of propagation and their almost immunity against decoherence. My thesis work has been focused on the conception, fabrication and characterization of a miniaturized semiconductor source of entangled photons, working at room temperature and telecom wavelengths. First the theoretical concepts relevant to understand the work are described (chapter 1). Then the conception and fabrication procedures are given (chapter 2). Chapter 3 presents the optoelectronics characterization of the device under electrical pumping, and chapter 4 the results on the optical losses measurements and the nonlinear optical characterization (second harmonic generation, spontaneous parametric down conversion and joint spectral intensity reconstruction). Chapters 5 and 6 focus on the characterization of the quantum state generated by a passive sample (demonstration of indistinguishability and energy-time entanglement) and its utilization in a multi- user quantum key distribution protocol (polarization entanglement). Finally the work on the first electrically driven photon pairs source emitting in the telecom range and working at room temperature is presented (chapter 7).

•Nov 14, 2016•0 citations

Integrated AlGaAs sources of quantum correlated photon pairs

Guillaume Boucher, Claire Autebert, Fabien Boitier +7 more

We report our recent work on integrated AlGaAs sources of bi-photon states operating at room temperature and telecom wavelength. The extreme versatility of the emitted state and the electrical injection make these devices very good candidates for future photon communications.

European Conference on Optical Communication•Sep 1, 2014•0 citations

CLEO®/Europe - EQEC 2015 Electrically Injected Source of Photon Pairs at Room Temperature: Device Performances and Entanglement Generation

Claire Autebert, Fabien Boitier, Yacine Halioua +4 more

Integrated quantum photonics is a very active field of quantum information science. In particular, the maturity of semiconductor technology offers a huge potential in terms of ultra-compact devices including the generation, manipulation and detection of many quantum bits. In these last years, spectacular progresses have been done using different material platforms, as AlGaAs, Silicon-On-Insulator, Silica-On-Silicon; important results have also been obtained on the integration of semiconductor waveguides and superconducting single photon detectors.

European Quantum Electronics Conference (EQEC)•Jun 21, 2015•0 citations
Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.
One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57 μm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×10(-11) pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.
Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.
Integrated photonics is playing a key role in the development of quantum technologies covering applications ranging from quantum communication to computing and from simulations to sensing. In this context, material platforms enabling the chip-scale integration of quantum components are a key issue on the way towards real-world and large-scale technological implementations. In this paper, we review our last achievements on AlGaAs Bragg reflection waveguides emitting nonclassical states of light by spontaneous parametric down conversion. The choice of this platform combines the advantages of a mature fabrication technology, room temperature operation, emission in the telecom C-Band and compliance with electrical injection. We demonstrate the ability of these devices to generate a large variety of quantum states spanning from biphoton frequency combs to broadband polarization entanglement enabling promising applications in quantum processing as well as flexible quantum networks.
One of the main issues in the domain of quantum information and communication is the generation, manipulation and detection of several qubits on a single chip. Several approaches are currently investigated for the implementation of qubits on different types of physical supports and a variety of quantum information technologies are under development: for quantum memories, spectacular advances have been done on trapped atoms and ions, while to transmit information, photons are the ideal support thanks to their high speed of propagation and their almost immunity against decoherence. My thesis work has been focused on the conception, fabrication and characterization of a miniaturized semiconductor source of entangled photons, working at room temperature and telecom wavelengths. First the theoretical concepts relevant to understand the work are described (chapter 1). Then the conception and fabrication procedures are given (chapter 2). Chapter 3 presents the optoelectronics characterization of the device under electrical pumping, and chapter 4 the results on the optical losses measurements and the nonlinear optical characterization (second harmonic generation, spontaneous parametric down conversion and joint spectral intensity reconstruction). Chapters 5 and 6 focus on the characterization of the quantum state generated by a passive sample (demonstration of indistinguishability and energy-time entanglement) and its utilization in a multi- user quantum key distribution protocol (polarization entanglement). Finally the work on the first electrically driven photon pairs source emitting in the telecom range and working at room temperature is presented (chapter 7).
Integrated quantum photonics is a very active field of quantum information science. In particular, the maturity of semiconductor technology offers a huge potential in terms of ultra-compact devices including the generation, manipulation and detection of many quantum bits. In these last years, spectacular progresses have been done using different material platforms, as AlGaAs, Silicon-On-Insulator, Silica-On-Silicon; important results have also been obtained on the integration of semiconductor waveguides and superconducting single photon detectors.