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Design and fabrication of internally shunted tantalum nitride barrier Josephson junctions for RSFQ logic applications

Yu Lei

Published Jan 1, 2005• 0 citations
OpenAlex

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Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.

arXiv:cond-mat/0605532•May 22, 2006•1 citation
In the future generations of telecommunication satellites, it will be necessary to reduce the analog part in reception systems and achieve RF front-end at higher carrier frequencies with higher sensitivity and higher bandwidth. RSFQ (Rapid Single Flux Quantum) superconducting logic is suitable to process very high speed digital data processing with very low power dissipation and with performances well beyond what should be possible with CMOS technology in the next decades. The RSFQ circuit technology based on superconducting niobium nitride (NbN) presently developed at CEA-G involves NbN/Ta(sub X)N/NbN internally shunted Josephson junctions with high critical current density and high maximum switching frequency close to 1THz, as required by ultra-fast RSFQ electronics. Very low power dissipation and very low noise level of fast NbN RSFQ gates designed and fabricated at CEA-G are presented. The RSFQ circuit for a sampling comparator has been studied operating in a sigma-delta modulator with a 30 GHz sinusoidal input carrier signal and high sampling clock frequency of about 200 GHz. We will present the thermal noise and how it influences the phase fluctuations. Such a nitride technology has been recently demonstrated to be fully compatible with large scale integration on 200 mm diameter silicon wafer at reasonable fabrication cost in a micro-nano-electronic platform at CEA-Leti. The applicability of NbN RSFQ digital functions in the next decade Space Telecoms will finally be possible thanks to the development of reliable, low power consuming, space qualified cryocoolers operating at about 10K. Moreover semiconductor system design and integration techniques can be simply adapted to superconductivity, to fit the rules of any RSFQ library-foundry network, such as "CONNECT" for Japan and "FLUXONICS" for Europe.
We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N2 pressure during reactive sputtering. The temperature dependence of IcRn of the junctions with ∼13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, IcRn values >500 μV were observed up to 8.3 K, with Ic and Rn of magnitudes that are suitable for single-flux-quantum digital circuits.
Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.