Photoelectric Detection of Nitrogen‐Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

Emilie Bourgeois, Josef Soucek, Jaroslav Hrubý +2 more

Advanced Quantum TechnologiesMar 17, 202211 citations

The Japan Society of Applied Physics

Photocurrent detection of NV centers in diamond using a device structure

Masafumi Shiigai, Takuya Murooka, B. Yang, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Satoshi Yamasaki, Mutsuko Hatano, Takayuki Iwasaki

Published Jan 28, 2020• 0 citations

OpenAlex

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Photoelectrical readout of the electronic spin state of the nitrogen-vacancy (NV) center in diamond is attracting significant interest due to the numerous advantages it possesses compared with conventional fluorescence readout. The higher charge carrier rate compared to the photon rate and the integration of the detection scheme on a chip can significantly advance quantum sensing and computing with color centers in diamond. Until now, photoelectric readout has been performed on ensembles of NV centers or single NV centers deep in ultrapure diamond substrates. However, many applications require the artificial creation and precise placement of shallow NV centers, and photoelectric detection of such centers has been challenging. Here we demonstrate photoelectrical readout and coherent control of the electronic spin of implanted shallow ($\sim$10 nm) NV centers buried by diamond overgrowth. The photoelectrically measured Ramsey $T_2^*$ agrees with conventional fluorescence readout and shows no measurable dependence on the readout photocurrent, for both shallow implanted and deep ingrown NV centers. We further find that overgrowth improves photoelectric readout by suppressing the background photocurrent. These results establish photoelectric readout as a viable route to chip-integrated, electrically detected nanoscale sensing and to spin registers based on engineered shallow NV centers.Photoelectrical readout of the electronic spin state of the nitrogen-vacancy (NV) center in diamond is attracting significant interest due to the numerous advantages it possesses compared with conventional fluorescence readout. The higher charge carrier rate compared to the photon rate and the integration of the detection scheme on a chip can significantly advance quantum sensing and computing with color centers in diamond. Until now, photoelectric readout has been performed on ensembles of NV centers or single NV centers deep in ultrapure diamond substrates. However, many applications require the artificial creation and precise placement of shallow NV centers, and photoelectric detection of such centers has been challenging. Here we demonstrate photoelectrical readout and coherent control of the electronic spin of implanted shallow ($\sim$10 nm) NV centers buried by diamond overgrowth. The photoelectrically measured Ramsey $T_2^*$ agrees with conventional fluorescence readout and shows no measurable dependence on the readout photocurrent, for both shallow implanted and deep ingrown NV centers. We further find that overgrowth improves photoelectric readout by suppressing the background photocurrent. These results establish photoelectric readout as a viable route to chip-integrated, electrically detected nanoscale sensing and to spin registers based on engineered shallow NV centers.

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Photoelectric Detection of Nitrogen‐Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

Emilie Bourgeois, Josef Soucek, Jaroslav Hrubý +2 more

Abstract The photoelectric detection of nitrogen‐vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid‐state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin‐state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin‐state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor‐type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low‐energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.Abstract The photoelectric detection of nitrogen‐vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid‐state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin‐state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin‐state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor‐type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low‐energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.

Advanced Quantum TechnologiesMar 17, 202211 citations

T_2^*

agrees with conventional fluorescence readout and shows no measurable dependence on the readout photocurrent, for both shallow implanted and deep ingrown NV centers. We further find that overgrowth improves photoelectric readout by suppressing the background photocurrent. These results establish photoelectric readout as a viable route to chip-integrated, electrically detected nanoscale sensing and to spin registers based on engineered shallow NV centers.