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Advanced Quantum Technologies

Photoelectric Detection of Nitrogen‐Vacancy Centers Magnetic Resonances in Diamond: Role of Charge Exchanges with Other Optoelectrically Active Defects

Emilie Bourgeois, Josef Soucek, Jaroslav Hrubý, Michal Gulka, Miloš Nesládek

Published Mar 17, 2022• 11 citations
Publisher

Abstract

Abstract The photoelectric detection of nitrogen‐vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid‐state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin‐state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin‐state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor‐type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low‐energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.

DOI
10.1002/qute.202100153

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Abstract The photoelectric detection of nitrogen‐vacancy (NV) magnetic resonance (PDMR) in diamond, used for spin state detection and based on reading the photocurrent resulting from NV ionization, offers physical and technical advantages for the development of miniaturized and scalable quantum sensors, as well as solid‐state quantum information devices integrated with electronics. Charge exchanges between NV centers and other optoelectrically active defects in diamond are an essential part of the PDMR scheme, impacting the spin‐state control and the performances of the photoelectric readout. Through experimental characterization and modeling, processes governing the spin‐state contrast, in particular the hole carrier contribution to the photocurrent and the role of acceptor‐type defects are discussed. Such acceptor defects can act as traps for free electrons resulting from NV photoionization. Consequently, the hole current can increase at resonance, ultimately leading to an inversion of the sign of PDMR resonances, i.e. to a positive spin contrast. Based on these findings, a method to improve PDMR performances in terms of spin contrast and photoelectric detection rate by selectively ionizing low‐energy acceptor defects using a bias red illumination is proposed. This method is shown to lead to a significant improvement of the photoelectric spin detection sensitivity, important for future practical devices.
Abstract A novel method for reading out the electron spin state of the negatively charged nitrogen‐vacancy (NV) point defect in diamond, based on photoelectric detection of NV magnetic resonances (PDMR), is reviewed. As a convenient way to measure the spin state of qubits, the presented technique is anticipated to lead to a vast range of applications in the field of quantum technologies. It has been demonstrated that this method can be used both in continuous‐wave mode and for the pulse readout of coherently manipulated NV− spins. The PDMR technique presents interesting advantages over the commonly used optical detection of magnetic resonances (ODMR) and was recently downscaled to the reading out of a single NV− spin qubit. The principles, current developments, advantages, and drawbacks of PDMR are presented in this progress report. A complete to‐date methodology of NV photoelectric readout is described and PDMR is compared to ODMR. Future developments and possible improvements of the technique are mentioned. The results of the latest studies, aiming at overcoming limitations in the PDMR contrast through a better understanding of NV photo‐physics and of charge exchanges between NV centers and other electrically active defects, are discussed.
The core issue for the implementation of NV center qubit technology is a sensitive readout of the NV spin state. We present here a detailed theoretical and experimental study of NV center photoionization processes, used as a basis for the design of a dual-beam photoelectric method for the detection of NV magnetic resonances (PDMR). This scheme, based on NV one-photon ionization, is significantly more efficient than the previously reported single-beam excitation scheme. We demonstrate this technique on small ensembles of $\ensuremath{\sim}10$ shallow NVs implanted in electronic grade diamond (a relevant material for quantum technology), on which we achieve a cw magnetic resonance contrast of 9%---three times enhanced compared to previous work. The dual-beam PDMR scheme allows independent control of the photoionization rate and spin magnetic resonance contrast. Under a similar excitation, we obtain a significantly higher photocurrent, and thus an improved signal-to-noise ratio, compared to single-beam PDMR. Finally, this scheme is predicted to enhance magnetic resonance contrast in the case of samples with a high proportion of substitutional nitrogen defects, and could therefore enable the photoelectric readout of single NV spins.
The readout of negatively charged nitrogen-vacancy centre electron spins is essential for applications in quantum computation, metrology and sensing. Conventional readout protocols are based on the detection of photons emitted from nitrogen-vacancy centres, a process limited by the efficiency of photon collection. We report on an alternative principle for detecting the magnetic resonance of nitrogen-vacancy centres, allowing the direct photoelectric readout of nitrogen-vacancy centres spin state in an all-diamond device. The photocurrent detection of magnetic resonance scheme is based on the detection of charge carriers promoted to the conduction band of diamond by two-photon ionization of nitrogen-vacancy centres. The optical and photoelectric detection of magnetic resonance are compared, by performing both types of measurements simultaneously. The minima detected in the measured photocurrent at resonant microwave frequencies are attributed to the spin-dependent ionization dynamics of nitrogen-vacancy, originating from spin-selective non-radiative transitions to the metastable singlet state.
Electrical detection of a nitrogen-vacancy (NV) center in diamond is advantageous for developing and integrating quantum information processing devices and quantum sensors. However, the mechanism for the electrical detection of NV spins is not fully understood. In this study, we observe positive contrast in photoelectrically detected magnetic resonance (PDMR) despite the usually observed negative PDMR contrast. To discuss the sign of the PDMR contrast, we numerically analyze the dynamics of photocarrier generation by NV centers using a seven-level rate model. It is found that the sign of the PDMR contrast depends on the difference in the photocurrent generated from the excited states and the metastable state of NV centers. Furthermore, we demonstrate alternating-current (AC) magnetic field sensing using spin coherence with the PDMR technique using a phase-cycling-based noise-canceling technique to suppress the noise from a fluctuating magnetic environment. We obtained the sensitivity of AC magnetic-field of ${\sim}29{\text{nT}}/\sqrt {{\mathbf{Hz}}} $ with the PDMR technique.
We report on a mathematical model of the photoelectric response of NV colour centres in diamond, that can be employed for sensing and quantum science information applications. Although the model applies to NV centre in diamond, it can be applied with small modifications to other semiconducting solid state qubits. In our model, we include the drift and collection of charge carriers as well as the presence of other defects via generation and recombination dynamics. Though the photoluminescence readout and the associated dynamics of the NV defect has been extensively studied experimentally and theoretically, so far, there has been no precise model for photocurrent readout, including these effects. In our description, we use a multilevel-level system including mS=0, mS=+-1 ground and excited states, singlet state and the NV0 neutral state. Also, the presence of substitutional nitrogen (NS), which for example determines the spin coherence via the paramagnetic spin bath, is discussed together with presence of acceptor defects. We model the time-dependent occupation of all electronic sublevels and also consider the electronic charge transport from the Boltzmann transport equation, leading to information about the charge state transitions and recombination dynamics. ODMR and PDMR response as well as their quantum efficiencies, are calculated. On this basis, we determine an optimal parameter space for qubit operations, including the highest spin contrast and especially relate those to NS presence. The model is confirmed experimentally and can become a useful tool for optimisation of the performance of NV qubit photoelectric readout.
Nitrogen-vacancy (NV) centers in diamond have become an important instrument for quantum sensing and quantum information science. However, the readout of NV spin state requires bulky optical setups, limiting fabrication of miniaturized compact devices for practical use. Here we realized photoelectrical detection of magnetic resonance as well as Rabi oscillations on a single-defect level. Furthermore, photoelectrical imaging of individual NV centers at room temperature was demonstrated, surpassing conventional optical readout methods by providing high imaging contrast and signal-to-noise ratio. These results pave the way toward fully integrated quantum diamond devices.