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arXiv:2607.15869

Photoelectrical readout and Ramsey interferometry of single shallowly implanted NV centers in diamond

Ilia Chuprina, Christoph Findler, Johannes Lang, Petr Siyushev, Fedor Jelezko

cond-mat.mes-hallquant-phSubmitted Jul 17, 2026• Announced Jul 20, 2026• 0 citations
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Abstract

Photoelectrical readout of the electronic spin state of the nitrogen-vacancy (NV) center in diamond is attracting significant interest due to the numerous advantages it possesses compared with conventional fluorescence readout. The higher charge carrier rate compared to the photon rate and the integration of the detection scheme on a chip can significantly advance quantum sensing and computing with color centers in diamond. Until now, photoelectric readout has been performed on ensembles of NV centers or single NV centers deep in ultrapure diamond substrates. However, many applications require the artificial creation and precise placement of shallow NV centers, and photoelectric detection of such centers has been challenging. Here we demonstrate photoelectrical readout and coherent control of the electronic spin of implanted shallow ($\sim$10 nm) NV centers buried by diamond overgrowth. The photoelectrically measured Ramsey $T_2^*$ agrees with conventional fluorescence readout and shows no measurable dependence on the readout photocurrent, for both shallow implanted and deep ingrown NV centers. We further find that overgrowth improves photoelectric readout by suppressing the background photocurrent. These results establish photoelectric readout as a viable route to chip-integrated, electrically detected nanoscale sensing and to spin registers based on engineered shallow NV centers.

Comments
7 pages, 3 figures, Supplemental Material

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Photoelectrical readout of the electronic spin state of the nitrogen-vacancy (NV) center in diamond is attracting significant interest due to the numerous advantages it possesses compared with conventional fluorescence readout. The higher charge carrier rate compared to the photon rate and the integration of the detection scheme on a chip can significantly advance quantum sensing and computing with color centers in diamond. Until now, photoelectric readout has been performed on ensembles of NV centers or single NV centers deep in ultrapure diamond substrates. However, many applications require the artificial creation and precise placement of shallow NV centers, and photoelectric detection of such centers has been challenging. Here we demonstrate photoelectrical readout and coherent control of the electronic spin of implanted shallow (∼\sim∼10 nm) NV centers buried by diamond overgrowth. The photoelectrically measured Ramsey T2∗T_2^*T2∗​ agrees with conventional fluorescence readout and shows no measurable dependence on the readout photocurrent, for both shallow implanted and deep ingrown NV centers. We further find that overgrowth improves photoelectric readout by suppressing the background photocurrent. These results establish photoelectric readout as a viable route to chip-integrated, electrically detected nanoscale sensing and to spin registers based on engineered shallow NV centers.
Abstract High-fidelity projective readout of a qubit’s state in a single experimental repetition is a prerequisite for various quantum protocols of sensing and computing. Achieving single-shot readout is challenging for solid-state qubits. For Nitrogen-Vacancy (NV) centers in diamond, it has been realized using nuclear memories or resonant excitation at cryogenic temperature. All of these existing approaches have stringent experimental demands. In particular, they require a high efficiency of photon collection, such as immersion optics or all-diamond micro-optics. For some of the most relevant applications, such as shallow implanted NV centers in a cryogenic environment, these tools are unavailable. Here we demonstrate an all-optical spin readout scheme that achieves single-shot fidelity even if photon collection is poor (delivering less than 10 3 clicks/second). The scheme is based on spin-dependent resonant excitation at cryogenic temperature combined with spin-to-charge conversion, mapping the fragile electron spin states to the stable charge states. We prove this technique to work on shallow implanted NV centers, as they are required for sensing and scalable NV-based quantum registers.
High spatial resolution quantum sensing of near-surface nitrogen vacancy (NV) centers in diamond has enabled detection of magnetic, electrical, and thermal signals at the nanoscale. At depths of just a few nanometers, NV centers serve as localized quantum probes for external spins or low-dimensional materials, but their proximity to the surface also enhances decoherence caused by fluctuating nuclear spins. While advances in surface engineering have stabilized the charge state of NV centers at depths of tens of nanometers, achieving both ultra-shallow implantation (0.5-2 nm) and long-term spin coherence remains a central challenge. In this work, we show using first-principles modeling that, by exploiting the interaction of surface-induced strain and weak dc magnetic fields, the spin coherence times of 1-nm-deep NV centers can be greatly improved near the spin-phonon-confined regime at room temperature in 12C-rich diamonds. We also demonstrate that this protocol benefits ~ 10-nm-deep NV centers in natural diamond, enabling vector magnetometry at the nanoscale. Shallow NV centers in diamond are advantageous for quantum sensing but suffer from surface magnetic noise. Using first-principles simulations supported by experiments, the authors show that a combination of small magnetic fields and surface strain can significantly enhance spin coherence of 1 nm-deep NV centers.
Nitrogen-vacancy (NV) centers in diamond are of great interest for nano- and macro-scale magnetic field sensing. Most sensing protocols rely on conventional optical readout, which is limited by photon shot noise. The recently developed photoelectrical (PE) readout of the NV center electron spin state promises to overcome these limitations. However, the noise of the PE readout and its influence on readout efficiency have not been thoroughly studied. In this work, we perform magnetic field sensing and estimate the sensitivity using optical and PE readout with a single and an ensemble of NV centers in diamond. We investigate the electronic noise associated with the photoelectric detection and estimate the readout efficiency, using Gaussian statistics. Our quantitative analysis shows that the Johnson-Nyquist noise-limited photoelectric magnetic field sensitivity could outperform optical measurements by an order of magnitude. This work is an essential step towards the development of on-chip magnetometers using photoelectrical detection in diamond.
The nitrogen-vacancy (NV) center in diamond is one of the advanced candidates for solid-state quantum computing at room temperature and has proven to be competitive in terms of gate fidelity and the availability of quantum error correction codes. Ambient solid-state qubits may therefore provide quantum computing architectures as an alternative to current solutions. The NV center has an associated electronic spin that is conventionally read out via photoluminescence. As an alternative, the electrical readout is not limited by the confocal resolution of quantum microscopes, which is required in the development of NV-based quantum processors to establish a scalable individual single-spin readout on the order of a few nanometers (necessary for strong dipole-dipole coupling). In this work, the performance of photoelectric readout versus traditional optical readout is investigated to perform Quantum State Tomography measurements on a single NV center. A state fidelity of 0.995 ±\pm± 0.006 is achieved using photoelectrical spin-state readout for state reconstruction, comparable to simultaneous optical measurements. We report photocurrent signal delays, which significantly slow down the photocurrent tomography. We develop a model describing their origin, and propose strategies for their mitigation.
Nitrogen-vacancy (NV) centers in diamond have become an important instrument for quantum sensing and quantum information science. However, the readout of NV spin state requires bulky optical setups, limiting fabrication of miniaturized compact devices for practical use. Here we realized photoelectrical detection of magnetic resonance as well as Rabi oscillations on a single-defect level. Furthermore, photoelectrical imaging of individual NV centers at room temperature was demonstrated, surpassing conventional optical readout methods by providing high imaging contrast and signal-to-noise ratio. These results pave the way toward fully integrated quantum diamond devices.
The readout of negatively charged nitrogen-vacancy centre electron spins is essential for applications in quantum computation, metrology and sensing. Conventional readout protocols are based on the detection of photons emitted from nitrogen-vacancy centres, a process limited by the efficiency of photon collection. We report on an alternative principle for detecting the magnetic resonance of nitrogen-vacancy centres, allowing the direct photoelectric readout of nitrogen-vacancy centres spin state in an all-diamond device. The photocurrent detection of magnetic resonance scheme is based on the detection of charge carriers promoted to the conduction band of diamond by two-photon ionization of nitrogen-vacancy centres. The optical and photoelectric detection of magnetic resonance are compared, by performing both types of measurements simultaneously. The minima detected in the measured photocurrent at resonant microwave frequencies are attributed to the spin-dependent ionization dynamics of nitrogen-vacancy, originating from spin-selective non-radiative transitions to the metastable singlet state.