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Softwaretechnik-Trends

IF Bandwidth of Phonon Cooled HEB Mixers Made from NbN films on MgO Substrates

Serguei Cherednichenko, M. Kroug, Pavel A. Yagoubov, H. Merkel, E. Kollberg, K. S. Yngvesson, B. Voronov, Gregory N Gol'tsman

Published May 1, 2000• 6 citations
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We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate. Introduction. In the last years, the development of HEB mixers has reached such a high level that these devices can be successfully utilized in heterodyne receivers of THz frequency range. Their high sensitivity and low LO power make them suitable for radioastronomic observations on space- and airbom platforms. An NbN HEB mixer seems to be a

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IF bandwidth and noise temperature measurements of NbN HEB mixers on MgO substrates

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We report the fabrication and testing of hot electron bolometric mixers with an ultrathin NbN film as heterodyne receivers operating at terahertz frequencies. We found that the quality of the NbN strip is usually degraded by damage resulting from the fabrication process, and we developed a process for reducing such damage. We also fabricated HEB mixers with a new structure in order to study the IF bandwidth determined by the original quality of the NbN thin films. Investigations at 100 GHz revealed that the widest IF bandwidth of 2.0 GHz was obtained by a mixer based on a 2.8 nm-thick NbN film. An HEB mixer based on the 2.8 nm-thick NbN film was also fabricated and evaluated. The receiver noise temperature at 900 GHz was 780 K, the absorbed LO power was about 400 nW, and the conversion gain was -13 dB.

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European Microwave Conference (EuMC)•Aug 24, 2005•2 citations
We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate. Introduction. In the last years, the development of HEB mixers has reached such a high level that these devices can be successfully utilized in heterodyne receivers of THz frequency range. Their high sensitivity and low LO power make them suitable for radioastronomic observations on space- and airbom platforms. An NbN HEB mixer seems to be a
We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
We report the fabrication and testing of hot electron bolometric mixers with an ultrathin NbN film as heterodyne receivers operating at terahertz frequencies. We found that the quality of the NbN strip is usually degraded by damage resulting from the fabrication process, and we developed a process for reducing such damage. We also fabricated HEB mixers with a new structure in order to study the IF bandwidth determined by the original quality of the NbN thin films. Investigations at 100 GHz revealed that the widest IF bandwidth of 2.0 GHz was obtained by a mixer based on a 2.8 nm-thick NbN film. An HEB mixer based on the 2.8 nm-thick NbN film was also fabricated and evaluated. The receiver noise temperature at 900 GHz was 780 K, the absorbed LO power was about 400 nW, and the conversion gain was -13 dB.