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Broadband, highly stable hot-electron mixers made of thin NbN films

Рябчун Сергей Александрович

Published Jan 1, 2009• 0 citations
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Hot-electron bolometer (HEB) mixers are a complex multi-layer thin film structure containing an ultra-thin superconducting film of NbN as a detecting element and a thick normal metal layer as an antenna structure. We have optimized the fabrication process starting with ultra-thin NbN films, Au films for antenna structures and their patterning using e-beam lithography and lift-off. The coupling between normal conducting antenna and NbN detector has been improved by introducing an intermediate NbN film to reduce proximity suppression of superconductivity in the detecting element. A critical temperature of about 9.5 K is reached for NbN films with a thickness between 5 nm and 6 nm. A twofold increase of the film thickness increases the critical temperature to 12 K. We have shown that a 20 nm thick buffer layer of NbN under a much thicker Au layer is sufficient to ensure a critical temperature of the bi-layer of 9 K. This value is close to the critical temperature of 5.5 nm thick HEB devices. The noise temperature of HEB mixer made using improved technology is about 800 K and was measured in a liquid cryogen free system with a quantum cascade laser as 2.5 THz local oscillator.

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Analysis of the Noise Performance of a Hot-Electron Superconducting Bolometer Mixer

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A theoretical analysis for the noise temperature of hot—electron superconducting mixer has been presented. The contributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteria ensuring low noise performance of the mixer has been stated and a simple analytic expression for the noise temperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivity does not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noise mechanisms has been estimated to be as low as 40-90 K for a mixer device made from Nb or NbN thin film. Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperature relaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidth is of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been made when a distinction between the impedance measured at high intermediate frequency (larger than the mixer bandwidth) and the mixer ohmic resistance has been taken into account. Recently obtained experimental data on Nb and NbN bolometer mixer devices are viewed in connection with the theoretical predictions. The noise temperature limit has also been specified for the mixer device where an outdiffusion cooling mechanism rather than the electron—phonon energy relaxation determines the mixer bandwidth. A consideration of the noise performance of a bolometer mixer made from YBaCuO film utilizing a hot—electron effect has been done.

•Mar 1, 1995•29 citations
Hot-electron bolometer (HEB) mixers are a complex multi-layer thin film structure containing an ultra-thin superconducting film of NbN as a detecting element and a thick normal metal layer as an antenna structure. We have optimized the fabrication process starting with ultra-thin NbN films, Au films for antenna structures and their patterning using e-beam lithography and lift-off. The coupling between normal conducting antenna and NbN detector has been improved by introducing an intermediate NbN film to reduce proximity suppression of superconductivity in the detecting element. A critical temperature of about 9.5 K is reached for NbN films with a thickness between 5 nm and 6 nm. A twofold increase of the film thickness increases the critical temperature to 12 K. We have shown that a 20 nm thick buffer layer of NbN under a much thicker Au layer is sufficient to ensure a critical temperature of the bi-layer of 9 K. This value is close to the critical temperature of 5.5 nm thick HEB devices. The noise temperature of HEB mixer made using improved technology is about 800 K and was measured in a liquid cryogen free system with a quantum cascade laser as 2.5 THz local oscillator.
A theoretical analysis for the noise temperature of hot—electron superconducting mixer has been presented. The contributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteria ensuring low noise performance of the mixer has been stated and a simple analytic expression for the noise temperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivity does not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noise mechanisms has been estimated to be as low as 40-90 K for a mixer device made from Nb or NbN thin film. Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperature relaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidth is of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been made when a distinction between the impedance measured at high intermediate frequency (larger than the mixer bandwidth) and the mixer ohmic resistance has been taken into account. Recently obtained experimental data on Nb and NbN bolometer mixer devices are viewed in connection with the theoretical predictions. The noise temperature limit has also been specified for the mixer device where an outdiffusion cooling mechanism rather than the electron—phonon energy relaxation determines the mixer bandwidth. A consideration of the noise performance of a bolometer mixer made from YBaCuO film utilizing a hot—electron effect has been done.