Analysis of the Noise Performance of a Hot-Electron Superconducting Bolometer Mixer
Boris S. Karasik, A. I. Elant’ev
Abstract
A theoretical analysis for the noise temperature of hot—electron superconducting mixer has been presented. The contributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteria ensuring low noise performance of the mixer has been stated and a simple analytic expression for the noise temperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivity does not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noise mechanisms has been estimated to be as low as 40-90 K for a mixer device made from Nb or NbN thin film. Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperature relaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidth is of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been made when a distinction between the impedance measured at high intermediate frequency (larger than the mixer bandwidth) and the mixer ohmic resistance has been taken into account. Recently obtained experimental data on Nb and NbN bolometer mixer devices are viewed in connection with the theoretical predictions. The noise temperature limit has also been specified for the mixer device where an outdiffusion cooling mechanism rather than the electron—phonon energy relaxation determines the mixer bandwidth. A consideration of the noise performance of a bolometer mixer made from YBaCuO film utilizing a hot—electron effect has been done.