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Applied Physics Letters

Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers

Peter John Burke, R. J. Schoelkopf, D. E. Prober, Anders J. Skalare, Boris S. Karasik, Michael C. Gaidis, William R. McGrath, B. Bumble, Henry George LeDuc

Published Mar 23, 1998• 7 citations
Publisher

Abstract

A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).

DOI
10.1063/1.121044

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Superconductor Science and Technology•Nov 1, 1999•4 citations
A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
We report a systematic, comprehensive set of measurements on the dynamics and noise processes in diffusion and phonon-cooled superconducting hot-electron bolometer mixers which will serve as ultralow noise detectors in THz heterodyne receivers. The conversion efficiency and output noise of devices of varying lengths were measured with radio frequency between 8 and 40 GHz. The devices studied consist of 100-Å-thin film Nb bridges connected to thick (1000 Å), high conductivity normal metal (Au) leads. The lengths of the devices studied range from 0.08 to 3 μm. For devices longer than the electron–phonon interaction length Le–ph≡Dτe–ph, with D the diffusion constant and τe–ph−1 the electron–phonon interaction rate, the hot electrons are cooled dominantly by the electron–phonon interaction, which in Nb is too slow for practical applications. If the device length is less than πLe–ph(≈1 μm at 4.2 K), then out diffusion of heat into the high conductivity leads dominates the cooling process. In this limit, the intermediate frequency (IF) bandwidth is found to vary as L−2, with L the bridge length, as expected for diffusion cooling. The shortest device has an IF bandwidth greater than 6 GHz, the largest reported for a low-Tc superconducting bolometric mixer. The dominant component of the output noise decreases with frequency in the same manner as the conversion efficiency, consistent with a model based on thermal fluctuations. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, ranging from 100 to 530 K (double sideband). The crossover from phonon dominated to diffusion dominated behavior is also demonstrated using noise thermometry measurements in the normal state. Scalar measurements of the device differential impedance in the intermediate state agree with a theoretical model which takes into account the thermal and electrical dynamics. We also present detailed comparisons with theoretical predictions of the output noise and conversion efficiency.
We present studies of the input and output noise of diffusion cooled hot-electron bolometer mixers. By simultaneously measuring the gain and noise (with a 14 GHz LO) as a function of intermediate frequency for a 0.16 /spl mu/m diffusion cooled Nb device, we show that the noise bandwidth (4 GHz) is larger than the gain bandwidth (2.4 GHz). The output noise is 55 K, and the mixer noise is very low, 340 K DSB. This shows that diffusion cooled devices have low noise over a broad enough intermediate frequency band for practical applications in THz receivers.
Mixing experiments have been performed at frequencies from 4 to 20 GHz on Nb thin-film superconducting hot-electron bolometers varying in length from 0.08 to 3 μm. The intermediate frequency (IF) bandwidth is found to vary as L−2, with L the bridge length, for devices shorter than √12 Le−ph≊1 μm, with Le−ph the electron-phonon length. The shortest device has an IF bandwidth greater than 6 GHz, the largest reported for a low-Tc superconducting bolometric mixer. The conversion efficiencies range from −5 to −11 dB (single sideband, SSB). For short bridges, the mixer noise temperature is found to be as low as 100 K (double sideband, DSB), with little length dependence. The local oscillator power required is small, ≊10 nW. Such mixers are very promising for low-noise THz heterodyne receivers.
Measurements of the spectrum of the output noise of Nb hot-electron mixers are presented. The device lengths vary from 0.08 pm to 3 pm, allowing the investigation of the crossover from phonon to diffusion cooling. The data span the IF range from 75 MHz to 7.5 GHz. The dominant contribution to the noise is thermal fluctuation noise, which is expected to display a one pole rolloff. We present data with 20 GHz LO applied in two cases: with LO power optimized for gain, and LO power optimized for mixer noise. We find that in the optimum gain case, the spectrum is in agreement with simple theoretical predictions, while in the minimum mixer noise case, the output noise is too low (< 15 K) to allow accurate measurements of the spectrum.
We have measured the spectrum of the output noise and the conversion gain from 0.1-7.5 GHz under identical conditions for both diffusion and phonon-cooled Nb bolometers, using a 20 GHz LO on a variety of devices varying in length from 0.08 izm to 3 Ara, where the gain-bandwidth varies between 100 MHz and > 6 GHz. In this paper, we will present systematic comparison between theory and experiment for the devices measured. We find the frequency dependence of the device conversion efficiency and noise is well described by a simple thermal model. We have used two methods of inferring dR/dT, and describe the predictions for the magnitude of the efficiency and noise based on these. Neither method provides consistent quantitative predictions of the magnitude of device performance for a variety of operating conditions. Thus the device performance, while excellent, must continue to be investigated experimentally. We have therefore begun a series of experiments on lower Tc devices made of Al, which may have improved performance.
We have measured the device length and temperature dependence of the intermediate frequency (IF) bandwidth and noise of hot-electron bolometer (HEB) mixers made from a high- T c superconductor. Mixer devices with lengths (L) between 50 nm and 1 µm were fabricated from 25-35 nm thick YBCO films on MgO and sapphire substrates. Bandwidth measurements were made using signal and local oscillator (LO) frequencies in the range 1-20 GHz. At low operation temperatures the IF bandwidths were about 100 MHz and several hundred MHz for devices on MgO and sapphire, respectively. At higher operation temperatures, where self-heating disappeared and flux-flow effects define the shape of the I - V characteristic, the measured IF bandwidth increased significantly. The temperature and IF dependence of absolute conversion efficiencies determined from noise measurements are in good agreement with the bandwidth data. At 2.7 GHz LO frequency the single-side-band mixer noise temperature of a 50 nm long HEB on MgO was about 8000 K.