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Superconductor Science and Technology

Submicron-long HTS hot-electron mixers

Oliver Harnack, Boris S. Karasik, William R. McGrath, Alan W. Kleinsasser, Jeff B. Barner

Published Nov 1, 1999• 4 citations
Publisher

Abstract

We have measured the device length and temperature dependence of the intermediate frequency (IF) bandwidth and noise of hot-electron bolometer (HEB) mixers made from a high- T c superconductor. Mixer devices with lengths (L) between 50 nm and 1 µm were fabricated from 25-35 nm thick YBCO films on MgO and sapphire substrates. Bandwidth measurements were made using signal and local oscillator (LO) frequencies in the range 1-20 GHz. At low operation temperatures the IF bandwidths were about 100 MHz and several hundred MHz for devices on MgO and sapphire, respectively. At higher operation temperatures, where self-heating disappeared and flux-flow effects define the shape of the I - V characteristic, the measured IF bandwidth increased significantly. The temperature and IF dependence of absolute conversion efficiencies determined from noise measurements are in good agreement with the bandwidth data. At 2.7 GHz LO frequency the single-side-band mixer noise temperature of a 50 nm long HEB on MgO was about 8000 K.

DOI
10.1088/0953-2048/12/11/347

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We have measured the device length and temperature dependence of the intermediate frequency (IF) bandwidth and noise of hot-electron bolometer (HEB) mixers made from a high- T c superconductor. Mixer devices with lengths (L) between 50 nm and 1 µm were fabricated from 25-35 nm thick YBCO films on MgO and sapphire substrates. Bandwidth measurements were made using signal and local oscillator (LO) frequencies in the range 1-20 GHz. At low operation temperatures the IF bandwidths were about 100 MHz and several hundred MHz for devices on MgO and sapphire, respectively. At higher operation temperatures, where self-heating disappeared and flux-flow effects define the shape of the I - V characteristic, the measured IF bandwidth increased significantly. The temperature and IF dependence of absolute conversion efficiencies determined from noise measurements are in good agreement with the bandwidth data. At 2.7 GHz LO frequency the single-side-band mixer noise temperature of a 50 nm long HEB on MgO was about 8000 K.
We report on our experimental studies of high-T/sub c/ Josephson mixers and high-T/sub c/ hot-electron bolometric (HEB) effect mixers. Mixers based on high-T/sub c/ bicrystal Josephson junctions have been fabricated, and noise, conversion efficiency, and receiver bandwidth measurements have been performed in the frequency range between 90 and 550 GHz. The dependence of the mixer performance on the operation temperature has been studied. High-T/sub c/ HEB mixers have been fabricated on MgO and sapphire substrates. We successfully sized the dimensions of the effective device volume down and managed to fabricate 50-60 nm long devices. In such short structures phonon diffusion into the normal metal electrodes should significantly improve the mixer performance.
Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz. The mixer device is a 0.15 - 0.3 micrometer microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be less than or equal to 3000 K at 2.5 THz and the mixer IF bandwidth is expected to be at least 10 GHz for a 0.1 micrometer long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20 - 100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated. The HEB mixer is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa2Cu3O7-(delta ) (YBCO) HEB are discussed. The expected LO power of 1 - 10 (mu) W and SSB noise temperature of approximately equals 2000 K may make this mixer attractive for various remote sensing applications.
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 μ wide and 2 μ long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
We report on microwave measurements of superconducting aluminum hot-electron bolometers (Al HEBs). Diffusion-cooled Al HEB mixers are good candidates for space-borne applications in the Terahertz frequency range since they are predicted to have small local oscillator (LO) power requirements, intermediate frequency (IF) bandwidths /spl gsim/10 GHz, and a noise temperature lower than that of Nb and NbN HEB mixers. Mixer measurements were made at an LO frequency /spl sim/30 GHz, with an IF in the range 0.1 to 7.3 GHz. For T<0.8 K, a magnetic field H=0.1-0.3 T was applied to suppress the superconductivity in the contact pads, and partly in the bridge. For a 0.6 /spl mu/m long device, we measure an IF bandwidth of 4 GHz, a conversion efficiency /spl eta/=-8 dB, and a mixer noise temperature T/sub M//spl gsim/4 K, DSB (T/sub mixer/=T/sub output noise//2/spl eta/). These results are shown to be in quantitative agreement with simple theoretical predictions.
Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range 1.1-2.5 THz. The mixer device is a 0.15-03 /spl mu/m microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be /spl les/3000 K at 2.5 THz and the mixer IF bandwidth is /spl ap/9-10 GHz for a 0.1 /spl mu/m long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20-100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated The HEB mixer Is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) HEB are also discussed. The expected LO power of 1-10 /spl mu/W and SSB noise temperature of /spl ap/2000 K may make this mixer attractive for various remote sensing applications.
Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 /spl Omega/ down to about 9 /spl Omega/ per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 /spl mu/m long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.