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Radiophysics and Quantum Electronics

Low-noise wide-band hot-electron bolometer mixer based on an NbN film

Рябчун Сергей Александрович, Ivan V. Tretyakov, Ivan V. Pentin, N. Kaurova, Vadim Aleksandrovich Seleznev, Boris M. Voronov, Matvey I. Finkel, S. N. Maslennikov, Gregory N Gol'tsman

Published Aug 1, 2009• 1 citation
Publisher
DOI
10.1007/s11141-010-9162-7

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•Apr 1, 2009•3 citations
NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.