We demonstrate superconducting qubits using epitaxially grown Josephson junctions. A fully epitaxial NbN/AlN/NbN trilayer on MgO (100) substrate is processed by photolithography and dry-etching into transmon qubits with a large Josephson energy. The tunnel barrier made of cubic-phase AlN, rather than the ordinary hexagonal phase, is the key to avoid piezoelectric coupling to the phonon bath. The energy-relaxation time and the spin-echo decay time of ∼500 ns are observed in the qubits that are coupled to a monolithically made coplanar waveguide resonator.
Epitaxial NbN/AlN/NbN Josephson junctions are promising alternatives to conventional Al/AlO
x/Al junctions for superconducting qubits due to their crystalline tunnel barriers and the high transition temperature of NbN. However, their integration into quantum circuits typically requires complex fabrication processes involving amorphous interlayer dielectrics, which can degrade qubit coherence times. To address these issues, we developed sidewall spacer passivated epitaxial NbN/AlN/NbN junctions using a fabrication process that reduces both the volume of amorphous dielectric material and fabrication complexity. The fabricated junctions exhibited a large gap voltage of approximately 5.6 mV and low subgap leakage currents. By varying the thickness of the AlN tunnel barrier, high-quality junctions were fabricated over a wide range of critical current densities
Jc, from 0.3 to 10
4 A/cm
2. In addition, the comparison of the current-voltage characteristics before and after buffered hydrofluoric acid treatment indicated that the wet etching process did not degrade the electrical characteristics of the junctions. These results establish a scalable fabrication process for epitaxial Josephson junctions and provide a promising platform for high-coherence nitride-based superconducting qubits.
We demonstrate superconducting qubits using epitaxially grown Josephson junctions. A fully epitaxial NbN/AlN/NbN trilayer on MgO (100) substrate is processed by photolithography and dry-etching into transmon qubits with a large Josephson energy. The tunnel barrier made of cubic-phase AlN, rather than the ordinary hexagonal phase, is the key to avoid piezoelectric coupling to the phonon bath. The energy-relaxation time and the spin-echo decay time of ∼500 ns are observed in the qubits that are coupled to a monolithically made coplanar waveguide resonator.