Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Journal of Optics and Photonic Engineering

Coupling Dynamics of All-Optical Memory Cell Based on Active Micro Ring Optical Integrator with LWI and EIT Phenomena

Nasibe Pasyar

Published Aug 31, 2018• 0 citations
Publisher

Abstract

The lasing without inversion phenomena in the three-level nanoparticles inserted in the micro ring resonators as the active gain medium for loss compensation in the all-optical memory unit cell is investigated. The effect of parameters such as pumping rate is analyzed. Also, the electromagnetically induced transparency effect in the three-level quantum dots is utilized as an on/off phase shifter for data reading at requested time. The optical integrator generates an optical step function to save the input data. Both the input data into the memory and the output read out are the return-to-zero Gaussian signals. Since, the light in the integrator is mostly erased during the rising edge of the phase shift pulse, the output data has the narrower pulse width. Finally, the effect of the power coupling coefficient of the directional couplers on data storage and read out process is investigated. Device minimizing for integrated purposes and high-speed data saving are the main advantages of the

DOI
10.35840/2631-5092/4512

Related papers

All-optical loadable and erasable memory cell design based on inversionless lasing and electromagnetically induced transparency effects

N Gholipour Verki, A. Hajibadali, Karim Abbasian +1 more

A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.

Quantum Electronics•Dec 31, 2011•1 citation

Absorption Less All-Optical Memory Cell Based on Active Micro Ring Optical Integrators

Nasibe Pasyar

The three-level nano particles are doped in dual micro ring resonators of the proposed all-optical memory unit cell as the active gain segment in which the optical power loss is compensated due to the effect of lasing without... | Find, read and cite all the research you need on Tech Science Press

Journal of Advanced Optics and Photonics•Jan 1, 2018•0 citations

Phase shift multiplication effect of all-optical analog to electromagnetically induced transparency in two micro-cavities side coupled to a waveguide system

Boyun Wang, Tao Wang, Jian Tang +2 more

We propose phase shift multiplication effect of all-optical analog to electromagnetically induced transparency in two photonic crystal micro-cavities side coupled to a waveguide system through external optical pump beams. With dynamically tuning the propagation phase of the line waveguide, the phase shift of the transmission spectrum in two micro-cavities side coupled to a waveguide system is doubled along with the phase shift of the line waveguide. π-phase shift and 2π-phase shift of the transmission spectrum are obtained when the propagation phase of the line waveguide is tuned to 0.5π-phase shift and π-phase shift, respectively. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and the coupled-mode formalism. These results show a new direction to the miniaturization and the low power consumption of microstructure integration photonic devices in optical communication and quantum information processing.

Journal of Applied Physics•Jan 8, 2014•8 citations

Design of all-optical memory cell using EIT and lasing without inversion phenomena in optical micro ring resonators

Nasibe Pasyar, Reza Yadipour, Hamed Baghban

Optics Communications•Apr 14, 2016•8 citations

Ultrafast Bit and Byte addressing of All-Optical Memory based on Microring Resonators for Next-Generation Optical Networks

Yingyan Huang, Seng‐Tiong Ho

We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100 Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50 muW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5 mW), ultrafast operation (10-100 Gbit/s), very compact size (<10 mumtimes10 mum per bit), addressable at bit or byte level, and monolithically integrated on InP chip

Asia Optical Fiber Communication and Optoelectronics Conference (AOE)•Oct 1, 2006•2 citations

Low-power, ultrafast, and dynamic all-optical tunable plasmonic analog to electromagnetically induced transparency in two resonators side-coupled with a waveguide system

Boyun Wang, Tao Wang, Xiaoming Li +2 more

We theoretically and numerically investigate a low-power, ultrafast, and dynamic all-optical tunable plasmonic analog to electromagnetically induced transparency (EIT) in two nanodisk resonators side-coupled to a metal-insulator-metal plasmonic waveguide system. The optical Kerr effect is enhanced by the slow light effect of the plasmonic EIT-like effect and the plasmonic waveguide based on graphene-Ag composite material structures with giant effective Kerr nonlinear coefficient. The optical Kerr effect modulation method is applied to improve tuning rate with response time of subpicoseconds or even femtoseconds. With dynamically tuning the propagation phase of the plasmonic waveguide, π-phase shift of the transmission spectrum in the plasmonic EIT-like system is achieved under excitation of a pump light with an intensity as low as 5.85 MW/cm2. The group delay is controlled between 0.09 and 0.4 ps. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and coupled-mode formalism. Results show a new direction toward the low power consumption and ultrafast responses of integration plasmonic photonic devices and all-optical dynamical storage of light devices in optical communication and quantum information processing.

Journal of Applied Physics•Jun 5, 2015•6 citations
The lasing without inversion phenomena in the three-level nanoparticles inserted in the micro ring resonators as the active gain medium for loss compensation in the all-optical memory unit cell is investigated. The effect of parameters such as pumping rate is analyzed. Also, the electromagnetically induced transparency effect in the three-level quantum dots is utilized as an on/off phase shifter for data reading at requested time. The optical integrator generates an optical step function to save the input data. Both the input data into the memory and the output read out are the return-to-zero Gaussian signals. Since, the light in the integrator is mostly erased during the rising edge of the phase shift pulse, the output data has the narrower pulse width. Finally, the effect of the power coupling coefficient of the directional couplers on data storage and read out process is investigated. Device minimizing for integrated purposes and high-speed data saving are the main advantages of the
A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.
We propose phase shift multiplication effect of all-optical analog to electromagnetically induced transparency in two photonic crystal micro-cavities side coupled to a waveguide system through external optical pump beams. With dynamically tuning the propagation phase of the line waveguide, the phase shift of the transmission spectrum in two micro-cavities side coupled to a waveguide system is doubled along with the phase shift of the line waveguide. π-phase shift and 2π-phase shift of the transmission spectrum are obtained when the propagation phase of the line waveguide is tuned to 0.5π-phase shift and π-phase shift, respectively. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and the coupled-mode formalism. These results show a new direction to the miniaturization and the low power consumption of microstructure integration photonic devices in optical communication and quantum information processing.
We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100 Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50 muW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5 mW), ultrafast operation (10-100 Gbit/s), very compact size (<10 mumtimes10 mum per bit), addressable at bit or byte level, and monolithically integrated on InP chip
We theoretically and numerically investigate a low-power, ultrafast, and dynamic all-optical tunable plasmonic analog to electromagnetically induced transparency (EIT) in two nanodisk resonators side-coupled to a metal-insulator-metal plasmonic waveguide system. The optical Kerr effect is enhanced by the slow light effect of the plasmonic EIT-like effect and the plasmonic waveguide based on graphene-Ag composite material structures with giant effective Kerr nonlinear coefficient. The optical Kerr effect modulation method is applied to improve tuning rate with response time of subpicoseconds or even femtoseconds. With dynamically tuning the propagation phase of the plasmonic waveguide, π-phase shift of the transmission spectrum in the plasmonic EIT-like system is achieved under excitation of a pump light with an intensity as low as 5.85 MW/cm2. The group delay is controlled between 0.09 and 0.4 ps. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and coupled-mode formalism. Results show a new direction toward the low power consumption and ultrafast responses of integration plasmonic photonic devices and all-optical dynamical storage of light devices in optical communication and quantum information processing.