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Asia Optical Fiber Communication and Optoelectronics Conference (AOE)

Ultrafast Bit and Byte addressing of All-Optical Memory based on Microring Resonators for Next-Generation Optical Networks

Yingyan Huang, Seng‐Tiong Ho

Published Oct 1, 2006• 2 citations
Publisher

Abstract

We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100 Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50 muW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5 mW), ultrafast operation (10-100 Gbit/s), very compact size (<10 mumtimes10 mum per bit), addressable at bit or byte level, and monolithically integrated on InP chip

DOI
10.1109/aoe.2006.307321

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We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100 Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50 muW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5 mW), ultrafast operation (10-100 Gbit/s), very compact size (<10 mumtimes10 mum per bit), addressable at bit or byte level, and monolithically integrated on InP chip
Passive fiber ring resonators synchronously pumped by cw trains of ultrashort pulses are shown to exhibit polarization symmetry breaking. Application of this feature to all-optical storage is considered. The proposed storage device operates in the flip-flop mode which makes possible all-optical writing and erasing operations on individual bits. Numerical simulations suggest that a storage capacity of the order of thousand bits could be attainable at bit rates of hundreds of Gb/s with a maximum information processing rate of several Gb/s
The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.
The fastest operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 26-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations had optical gain.
Optical storage devices are essential elements of future ultra-high bit-rate fiber communications systems in which they will find applications to various vital functions. Pulse pattern storage has been demonstrated in various fiber loop devices [1] that involve pulse control techniques in order to provide timing stability of the bit patterns. Most of these stabilization techniques are based on electrooptic modulation which limits the bit rates to a tenth of Gb/s. Moreover, erasing the data in these storage fiber loops requires switching off the system elect rooptically. Individual bit addressing is therefore impossible, which considerably restricts the functionality of the devices. We investigate here the possibility of developing a new type of all-optical fiber loop storage device. This device consists of a simple nonlinear passive fiber ring resonator synchronously and coherently pumped by a cw mode-locked train of ultrashort pulses. It is well known that this system exhibits rich nonlinear dynamics, in particular, optical bistability which is a feature naturally suited for applications to optical storage. However, erasing the data in an optical bistable element requires to switch off the holding beam and is therefore not practical. Recently, Haelterman et al. [2] have studied the polarization dynamics of nonlinear dispersive ring cavities with cw pump and have shown that these devices exhibit a polarization symmetry breaking characterized by a pitchfork bifurcation. This feature can be applied to the development of a set-reset flip-flop all-optical fiber loop pulsed memory. This work aims at presenting the results of a preliminary investigation of such a storage device.
The function of ‘memory’ is one of the key building blocks to implement advanced information processing in future ultrahigh-speed photonic networks. Previously, we have described an all-optical regenerative memory in which stable storage of data is obtained for several hours [1]. In addition, the memory architecture provides amplitude restoration for the stored pulses and the ability to set a threshold storage level [2]. Here we demonstrate an important extension to this design which not only allows optical pulses to be written to the memory but also permits optical pulses to be selectively read from storage. This additional capability greatly extends the usefulness of the memory as a sub-system in more complex processing operations [3]. To achieve the ‘read’ function we incorporate a third nonlinear optical switching element (TOAD/SLALOM [4,5]) to act as an all-optical modulator for the data stored in the regenerative memory.