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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Passive Fiber Ring Flip-Flop Memory Based On Polarization Dynamics

Jorge García-Mateos, Fernando Canal, Marc Haelterman

Published Jan 1, 1996• 0 citations
Publisher

Abstract

Passive fiber ring resonators synchronously pumped by cw trains of ultrashort pulses are shown to exhibit polarization symmetry breaking. Application of this feature to all-optical storage is considered. The proposed storage device operates in the flip-flop mode which makes possible all-optical writing and erasing operations on individual bits. Numerical simulations suggest that a storage capacity of the order of thousand bits could be attainable at bit rates of hundreds of Gb/s with a maximum information processing rate of several Gb/s

DOI
10.1109/cleoe.1996.561982

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Passive fiber ring resonators synchronously pumped by cw trains of ultrashort pulses are shown to exhibit polarization symmetry breaking. Application of this feature to all-optical storage is considered. The proposed storage device operates in the flip-flop mode which makes possible all-optical writing and erasing operations on individual bits. Numerical simulations suggest that a storage capacity of the order of thousand bits could be attainable at bit rates of hundreds of Gb/s with a maximum information processing rate of several Gb/s
Optical storage devices are essential elements of future ultra-high bit-rate fiber communications systems in which they will find applications to various vital functions. Pulse pattern storage has been demonstrated in various fiber loop devices [1] that involve pulse control techniques in order to provide timing stability of the bit patterns. Most of these stabilization techniques are based on electrooptic modulation which limits the bit rates to a tenth of Gb/s. Moreover, erasing the data in these storage fiber loops requires switching off the system elect rooptically. Individual bit addressing is therefore impossible, which considerably restricts the functionality of the devices. We investigate here the possibility of developing a new type of all-optical fiber loop storage device. This device consists of a simple nonlinear passive fiber ring resonator synchronously and coherently pumped by a cw mode-locked train of ultrashort pulses. It is well known that this system exhibits rich nonlinear dynamics, in particular, optical bistability which is a feature naturally suited for applications to optical storage. However, erasing the data in an optical bistable element requires to switch off the holding beam and is therefore not practical. Recently, Haelterman et al. [2] have studied the polarization dynamics of nonlinear dispersive ring cavities with cw pump and have shown that these devices exhibit a polarization symmetry breaking characterized by a pitchfork bifurcation. This feature can be applied to the development of a set-reset flip-flop all-optical fiber loop pulsed memory. This work aims at presenting the results of a preliminary investigation of such a storage device.
We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100 Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50 muW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5 mW), ultrafast operation (10-100 Gbit/s), very compact size (<10 mumtimes10 mum per bit), addressable at bit or byte level, and monolithically integrated on InP chip
We present an experimental demonstration of an all optical memory consisting of a single semiconductor optical amplifier as the active medium based on wave mixing. The circuit is a fiber ring consisting of a semiconductor amplifier, a bi-directional 2x2 fiber coupler, an isolator, a polarization controller, and a Faraday mirror. The output is observed on the spectrum analyzer, which consists of the peak wavelength of the SOA plus an additional signal generated through wave mixing, which is tunable within the band gap of the SOA. We shall demonstrate two modes of operation of the device, which will consist of a flip flop switch between three states, as well as a single data storage memory. The stable states consist of two modes, where the mode amplitude represents the state. Mode 1 corresponds to 1500 nanometers and mode 2 corresponds to 1530 nanometers. A contrast ratio between an “on” and “off” state is measured for each mode and the mode of operation is based on the polarization. We shall present the states for the circuit, the effect of drive current on the system, the effect of the SOA structure, wave mixing effects, and how to operate the device for both logic operation and data storage.
The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.