Quantum Electronics

All-optical loadable and erasable memory cell design based on inversionless lasing and electromagnetically induced transparency effects

N Gholipour Verki, A. Hajibadali, Karim Abbasian, Ali Rostami

Published Dec 31, 2011• 1 citation

Abstract

A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.

DOI: 10.1070/qe2011v041n12abeh014466

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