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Design of all-optical memory cell using EIT and lasing without inversion phenomena in optical micro ring resonators

Nasibe Pasyar, Reza Yadipour, Hamed Baghban

Optics CommunicationsApr 14, 20168 citations

All-optical loadable and erasable memory cell design based on inversionless lasing and electromagnetically induced transparency effects

N Gholipour Verki, A. Hajibadali, Karim Abbasian +1 more

A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.

Quantum ElectronicsDec 31, 20111 citation

Coupling Dynamics of All-Optical Memory Cell Based on Active Micro Ring Optical Integrator with LWI and EIT Phenomena

Nasibe Pasyar

The lasing without inversion phenomena in the three-level nanoparticles inserted in the micro ring resonators as the active gain medium for loss compensation in the all-optical memory unit cell is investigated. The effect of parameters such as pumping rate is analyzed. Also, the electromagnetically induced transparency effect in the three-level quantum dots is utilized as an on/off phase shifter for data reading at requested time. The optical integrator generates an optical step function to save the input data. Both the input data into the memory and the output read out are the return-to-zero Gaussian signals. Since, the light in the integrator is mostly erased during the rising edge of the phase shift pulse, the output data has the narrower pulse width. Finally, the effect of the power coupling coefficient of the directional couplers on data storage and read out process is investigated. Device minimizing for integrated purposes and high-speed data saving are the main advantages of theThe lasing without inversion phenomena in the three-level nanoparticles inserted in the micro ring resonators as the active gain medium for loss compensation in the all-optical memory unit cell is investigated. The effect of parameters such as pumping rate is analyzed. Also, the electromagnetically induced transparency effect in the three-level quantum dots is utilized as an on/off phase shifter for data reading at requested time. The optical integrator generates an optical step function to save the input data. Both the input data into the memory and the output read out are the return-to-zero Gaussian signals. Since, the light in the integrator is mostly erased during the rising edge of the phase shift pulse, the output data has the narrower pulse width. Finally, the effect of the power coupling coefficient of the directional couplers on data storage and read out process is investigated. Device minimizing for integrated purposes and high-speed data saving are the main advantages of the

International Journal of Optics and Photonic EngineeringAug 31, 20180 citations

A NOVEL OPTICAL MEMORY EFFECT USING MULTIPLE LIGHT SCATTERING

Atusi Kurita, Takashi Kushida

May 1, 20010 citations

Stimulated Electronic Transition Concept for an Erasable Optical Memory : Future Technology

Sacharia Albin, James D. Satira, David L. Livingston +1 more

JJAP seriesMar 31, 19920 citations

Information erasing in the phenomenon of long-lived photon echo

Nail Akhmediev

The possibility of erasing information in an arbitrary cell of an optical memory device based on the phenomenon of long-lived photon echo is theoretically considered. Optimal conditions for a maximal number of write-erase cycles in a given cell are obtained, and an experimental setup for observing this effect is proposed.

Optics LettersApr 1, 199033 citations

Design of All-Optical Loadable and Erasable Memory Cell by LWI and EIT Effects

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