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Optics Letters

Information erasing in the phenomenon of long-lived photon echo

Nail Akhmediev

Published Apr 1, 1990• 33 citations
Publisher

Abstract

The possibility of erasing information in an arbitrary cell of an optical memory device based on the phenomenon of long-lived photon echo is theoretically considered. Optimal conditions for a maximal number of write-erase cycles in a given cell are obtained, and an experimental setup for observing this effect is proposed.
DOI
10.1364/ol.15.001035

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The phenomenon of long-lived photon echo (LPE) has attracted much recent attention [1-6]. This interest stems from the possible application of this phenomenon in high-capacity optical memory devices (OMD) [7-8]. At present many fundamental problems crucial to the construction of an operating device are solved. The possibility of multiple information read out without refresh is shown theoretically [9] and experimentally [5,10]. Resonant media with storage times of the order of tens of hours and more have been investigated [4,5].Nevertheless, up to now it has not been clear whether it is possible to selectively erase information in an arbitrary memory cell of OMD. It was pointed out for the first time in Ref. [ 11] that it is in principle possible to erase information with random access using LPE signal suppression. We investigate the effect of LPE signal suppression in this work in more detail, and propose a simple technique for random access information erasing.
The possibility of increase of the information storage time in optical memory devices based on the long-lived photon echo in rare-earth ion doped crystals provided that the latter are nanometer ones is analyzed. Taking into account that in such materials the information storage time is determined by the population lifetimes of hyperfine sublevels of a ground electron state it is possible to increase it due to the modification of phonon density of states in nanocrystals as compared to bulk crystals.