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Journal of Advanced Optics and Photonics

Absorption Less All-Optical Memory Cell Based on Active Micro Ring Optical Integrators

Nasibe Pasyar

Published Jan 1, 2018• 0 citations
Publisher

Abstract

The three-level nano particles are doped in dual micro ring resonators of the proposed all-optical memory unit cell as the active gain segment in which the optical power loss is compensated due to the effect of lasing without... | Find, read and cite all the research you need on Tech Science Press
DOI
10.32604/jaop.2018.04369

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The lasing without inversion phenomena in the three-level nanoparticles inserted in the micro ring resonators as the active gain medium for loss compensation in the all-optical memory unit cell is investigated. The effect of parameters such as pumping rate is analyzed. Also, the electromagnetically induced transparency effect in the three-level quantum dots is utilized as an on/off phase shifter for data reading at requested time. The optical integrator generates an optical step function to save the input data. Both the input data into the memory and the output read out are the return-to-zero Gaussian signals. Since, the light in the integrator is mostly erased during the rising edge of the phase shift pulse, the output data has the narrower pulse width. Finally, the effect of the power coupling coefficient of the directional couplers on data storage and read out process is investigated. Device minimizing for integrated purposes and high-speed data saving are the main advantages of the
A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.