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Bulletin of the American Physical Society

Josephson-junction-based bolometer

Roope Kokkoniemi, Joonas Govenius, Visa Vesterinen, Russell E. Lake, András Gunyhó, Kuan Yen Tan, Slawomir Simbierowicz, Leif Grönberg, J. S. Lehtinen, Mika Prunnila, Juha Hassel, Olli Saira, Iiro Sallinen, Dibyendu Hazra, Antti Laitinen, Pertti Juhani Hakonen, Mikko Möttönen

Published Mar 7, 2019• 0 citations
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The voltage response of a thin-film normal-metal hot-electron bolometer based on a SINIS (superconductor-insulator-normal metal-insulator-superconductor) structure to the radiation of a high-temperature Josephson junction in the terahertz frequency region was measured. Bolometers were integrated with planar log-periodic and double-dipole antennas, and Josephson junctions were integrated with log-periodic antennas. Measurements showed that the Josephson junction at a temperature of 260 mK was overheated by the transport current, so that its electron temperature exceeded 3 K at a bias voltage of 1 mV. The maximum response of a bolometer with a double-dipole antenna was observed at a frequency of 300 GHz, which agreed well with the calculated value. The Josephson radiation was observed at frequencies up to 1.7 THz. The voltage response of a bolometer reached 4×10 8 V/W, and the total noise-equivalent power reached 1.5×10 −17 W/Hz 1/2 .
For sensitive wideband spectroscopy at TeraHertz frequencies one needs a wide-range electrically tunable THz source and a sensitive detector. In this paper a superconducting normal metal cold electron bolometer (CEB) was used as a broadband sensor. Bolometers were integrated with broadband log-periodic antenna designed for 0.2-2 THz frequency range and double-dipole antennas designed for 300 and 600 GHz central frequency. A Josephson junction was used as a wide band electrically tuned terahertz cryogenic oscillator. Bicrystal YBaCuO Josephson junctions demonstrated a characteristic voltage IcRn of over 4 mV that corresponds to characteristic frequency about 2 THz. The bolometer chip is attached to a Si substrate lens at 260 mK and the oscillator chip is attached to the sapphire substrate lens at 1.8 K, with lenses facing each other at the distance of few centimeters. High signal was measured in the whole frequency range up to 1.7 THz by simple changing the bias voltage of Josephson junction from zero to 3.5 mV. A voltage response of the bolometer up to 4*108 V/W corresponds to an amplifier-limited technical noise equivalent power of the bolometer NEP=1.25*10-17 W/Hz1/2. Combining a Terahertz band Josephson junction, a high-sensitive hot electron bolometer, and a sample under test in between, makes it possible to develop a cryogenic compact Terahertz-band transmission spectrometer with a resolution below 1 GHz corresponding to the linewidth of Josephson oscillations. For frequencies below 600 GHz a conventional Nb shunted SIS junction can be used as Josephson oscillator.