Superconducting nanowire bolometers

4-Pixel NbN Hot-Electron Bolometer Integrated in a Si $_3$ N $_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench4-Pixel NbN Hot-Electron Bolometer Integrated in a Si$_3$N$_4$ Planar Optical Waveguide with On-Chip Fiber-Alignment Trench

N. A. Vovk, G. A. Matveev, M. A. Mumlyakov +7 more

In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si $_3$ N $_4$ ) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches $3800~\mathrm{V/W}$ at a modulation frequency of $3~\mathrm{GHz}$ . We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si$_3$N$_4$) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches $3800~\mathrm{V/W}$ at a modulation frequency of $3~\mathrm{GHz}$. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).

arXiv:2603.01676Mar 2, 20260 citations

4-pixel NbN hot-electron bolometer integrated in a Si 3 N 4 planar optical waveguide with on-chip fiber-alignment trench

Nikolay A. Vovk, G. Matveev, Alexander M. Mumlyakov +7 more

Abstract In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si 3 N 4 ) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches 3800 V W − 1 at a modulation frequency of 3 GHz . We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors.Abstract In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si 3 N 4 ) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches 3800 V W − 1 at a modulation frequency of 3 GHz . We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors.

Superconductor Science and TechnologyJun 15, 20260 citations

High speed hot-electron superconducting bolometer

G. N. Gol'tsman

International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)Aug 30, 19930 citations

The design and instrumentation of a superconducting bolometer

Jerald Ray Hyde

Jan 1, 20150 citations

Afterpulsing and instability in superconducting nanowire avalanche photodetectors

Francesco Marsili, Faraz Najafi, Eric A. Dauler +2 more

We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30 nm wide nanowires. We studied the dependence of the reset time of SNAPs on the device inductance and discovered that SNAPs can provide a speed-up relative to superconducting nanowire single-photon detectors with the same area but with some limitations: (1) Reducing the series inductance of SNAPs (necessary for the avalanche formation) could result in the detectors operating in an unstable regime, (2) a trade-off exists between maximizing the bias current margin and minimizing the reset time of SNAPs, and (3) reducing the reset time of SNAPs below ∼1 ns resulted in afterpulsing.We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30 nm wide nanowires. We studied the dependence of the reset time of SNAPs on the device inductance and discovered that SNAPs can provide a speed-up relative to superconducting nanowire single-photon detectors with the same area but with some limitations: (1) Reducing the series inductance of SNAPs (necessary for the avalanche formation) could result in the detectors operating in an unstable regime, (2) a trade-off exists between maximizing the bias current margin and minimizing the reset time of SNAPs, and (3) reducing the reset time of SNAPs below ∼1 ns resulted in afterpulsing.

arXiv:1203.0065Applied Physics LettersMar 12, 201256 citations

4-Pixel NbN Hot-Electron Bolometer Integrated in a Si

_3

_4

Planar Optical Waveguide with On-Chip Fiber-Alignment Trench

In this work, we design and characterize a 4-pixel superconducting hot-electron bolometer (HEB) based on niobium nitride (NbN), integrated with individual planar silicon nitride (Si

_3

_4

) waveguides. The implemented architecture enables simultaneous detection of an optical signal in four independent channels. To efficiently couple optical radiation under cryogenic conditions, we employ an edge (end-fire) coupling approach using dedicated U-shaped grooves that provide accurate and stable positioning of an optical fiber with respect to the on-chip waveguide facet. The device responsivity is measured as a function of the HEB operating point. The measured voltage responsivity reaches

3800~\mathrm{V/W}

at a modulation frequency of

3~\mathrm{GHz}

. We demonstrate detection of optically modulated signals in the gigahertz range. The developed fabrication route is promising for compact integrated receiver systems and low-noise cryogenic microwave transducers, including superconducting nanowire single-photon detectors (SNSPDs).