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arXiv:1203.0065 · Applied Physics Letters

Afterpulsing and instability in superconducting nanowire avalanche photodetectors

Francesco Marsili, Faraz Najafi, Eric A. Dauler, R. J. Molnar, Karl K. Berggren

Published Mar 12, 2012• 56 citations
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Abstract

We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30 nm wide nanowires. We studied the dependence of the reset time of SNAPs on the device inductance and discovered that SNAPs can provide a speed-up relative to superconducting nanowire single-photon detectors with the same area but with some limitations: (1) Reducing the series inductance of SNAPs (necessary for the avalanche formation) could result in the detectors operating in an unstable regime, (2) a trade-off exists between maximizing the bias current margin and minimizing the reset time of SNAPs, and (3) reducing the reset time of SNAPs below ∼1 ns resulted in afterpulsing.

DOI
10.1063/1.3691944

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We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30 nm wide nanowires. We studied the dependence of the reset time of SNAPs on the device inductance and discovered that SNAPs can provide a speed-up relative to superconducting nanowire single-photon detectors with the same area but with some limitations: (1) Reducing the series inductance of SNAPs (necessary for the avalanche formation) could result in the detectors operating in an unstable regime, (2) a trade-off exists between maximizing the bias current margin and minimizing the reset time of SNAPs, and (3) reducing the reset time of SNAPs below ∼1 ns resulted in afterpulsing.
We propose a novel design of superconducting nanowire avalanche photodetectors (SNAPs), which combines the advantages of multistage avalanche SNAPs to lower the avalanche current IAVand that of series-SNAPs to reduce the reset time. As proof of principle, we fabricated 800 devices with large detection area (15 μm × 15 μm) and five different designs on a single silicon chip for comparison, which include standard SNSPDs, series-3-SNAPs, and our modified series-SNAPs with double-stage avalanche structure 2*2-SNAPs, 2*3-SNAPs, and 3*3-SNAPs. The former three types of the detectors demonstrate fully saturated device detection efficiencies of ~20% while the latter two types are latching at larger bias currents. In addition, the IAVof 2*2-SNAPs is only 64% of the switching current ISWthat is lower than series-3-SNAPs (74%) and well below that of 4-SNAPs (84%) reported elsewhere. We also measure that the exponential decay times of the detectors are proportional to 1/ n2due to the lack of external choke inductors. In particular, the decay time of 3*3-SNAPs is only 0.89 ns compared to the standard SNSPDs' 63.2 ns, showing the potential to attain GHz counting rates.
Superconducting circuits comprising SNSPDs placed in parallel—superconducting nanowire avalanche photodetectors, or SNAPs—have previously been demonstrated to improve the output signal-to-noise ratio (SNR) by increasing the critical current. In this work, we employ a 2-SNAP superconducting circuit with narrow (40 nm) niobium nitride (NbN) nanowires to improve the system detection efficiency to near-IR photons while maintaining high SNR. Additionally, while previous 2-SNAP demonstrations have added external choke inductance to stabilize the avalanching photocurrent, we show that the external inductance can be entirely folded into the active area by cascading 2-SNAP devices in series to produce a greatly increased active area. We fabricated series-2-SNAP (s2-SNAP) circuits with a nanowire length of 20 μm with cascades of 2-SNAPs providing the choke inductance necessary for SNAP operation. We observed that (1) the detection efficiency saturated at high bias currents, and (2) the 40 nm 2-SNAP circuit critical current was approximately twice that for a 40 nm non-SNAP configuration.
We investigated the timing jitter of superconducting nanowire avalanche photodetectors (SNAPs, also referred to as cascade-switching superconducting single-photon detectors) based on 30-nm-wide nanowires. At bias currents (IB) near the switching current, SNAPs showed sub-35-ps FWHM Gaussian jitter similar to standard 100-nm-wide superconducting nanowire single-photon detectors. At lower values of IB, the instrument response function (IRF) of the detectors became wider, more asymmetric, and shifted to longer time delays. We could reproduce the experimentally observed IRF time-shift in simulations based on an electrothermal model and explain the effect with a simple physical picture.
Recent progress in the development of superconducting nanowire single photon detectors (SSPD or SNSPD) has delivered excellent performance, and has had a great impact on a range of research fields. Significant efforts are being made to further improve the technology, and a primary concern remains to resolve the trade-offs between detection efficiency (DE), timing jitter, and response speed. We present a stable and high-performance fiber-coupled niobium titanium nitride superconducting nanowire avalanche photon detector (SNAP) that resolves these trade-offs. Autocorrelation function measurement revealed an afterpulse-free operation in serially connected two SNAP (SC-2SNAP), even in the absence of a choke inductor, achieving a 7.65 times faster response speed than standard SSPDs. The SC-2SNAP device showed a system detection efficiency (SDE) of 81.0% with wide bias current margin, a dark count rate of 6.8 counts/s, and full width at half maximum timing jitter of 68 ps, operating in a practical Gifford-McMahon cryocooler system.
We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.