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Bulletin of the American Physical Society

Magnetic-Field Effects on Error and Leakage in Randomized Benchmarking of a Si/SiGe Triple-dot Qubit

Cody Jones

Published Mar 5, 2019• 0 citations
OpenAlex

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arXiv:2112.09801•PRX Quantum•Mar 29, 2022•59 citations
We demonstrate rapid high-fidelity state preparation and measurement in exchange-only Si/SiGe triplequantum-dot qubits.Fast measurement integration (980-ns) and initialization (approximately 300-ns) operations are performed with all-electrical baseband control.We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but applicable more broadly, and report an infidelity of 2.5 ± 0.5×10 -3 .This result is enabled by a high-valley-splitting heterostructure, initialization at the two-to three-electron charge boundary, and careful assessment and mitigation of T 1 during spin-to-charge conversion.The ultimate fidelity is limited by a number of comparably important factors and we identify clear paths toward further improved fidelity and speed.Along with an observed single-qubit randomized benchmarking error rate of 1.7 × 10 -3 , this work demonstrates initialization, control, and measurement of Si/SiGe triple-dot qubits at fidelities and durations that are promising for scalable quantum information processing.