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Bulletin of the American Physical Society

Noise correlations in a two-qubit Si/SiGe quantum dot device

Jelmer M. Boter, Xiao Xue, Thomas F. Watson, Tobias Krähenmann, Vickram N. Premakumar, Daniel R. Ward, D. E. Savage, M. G. Lagally, Mark G. Friesen, S. N. Coppersmith, M. A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Published Mar 5, 2019• 0 citations
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We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anticorrelated noise, respectively. From these measurements we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. We expect nuclear spin noise to have an uncorrelated nature. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti)correlated noise sources with an asymmetric effect on the two qubits as can result from charge noise. Such a scenario in combination with nuclear spins is plausible given the data and the known decoherence mechanisms. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy.We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the 73 Ge nuclei play a key role in the spin-echo decay time T 2 , with a characteristic dependence on the magnetic field and the width of the Si quantum well.The 73 Ge noise peaks appear at the fundamental and first harmonic of the 73 Ge Larmor resonance, superimposed over 1/f noise due to 29 Si dipole-dipole dynamics, and are dependent on material epitaxy and the applied magnetic field.These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.