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Theoretical simulation of the mixing performance of distributed superconducting tunnel junction arrays at 1.3 THz

Shi Sheng-cai, Shan Wen-Lei, Jing Li

Published Jan 1, 2007• 0 citations
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Abstract

In this paper we focus on the numerical simulation of the mixing behaviors of distributed superconducting junction arrays at 1.2 THz. A novel type of superconducting tunnel junctions, i.e., NbN/AlN/Nb, which have a relatively high gap voltage (4.3 mV) and can reach a critical current density as high as several tens of kA/cm(2), are proposed for this characterization along with conventional Nb/AlOx/Nb junctions. The former is incorporated with a NbN/SiO2/Al tuning circuit, and the latter with a Nb/SiO2/Al and a NbTiN/SiO2/Al tuning circuits. The noise performance, local-oscillator power requirement, IF bandwidth, and optimum embedding impedance are thoroughly characterized for the two types of distributed superconducting junction arrays.

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IEEE Transactions on Applied Superconductivity•Jun 1, 1997•38 citations
In this paper we focus on the numerical simulation of the mixing behaviors of distributed superconducting junction arrays at 1.2 THz. A novel type of superconducting tunnel junctions, i.e., NbN/AlN/Nb, which have a relatively high gap voltage (4.3 mV) and can reach a critical current density as high as several tens of kA/cm(2), are proposed for this characterization along with conventional Nb/AlOx/Nb junctions. The former is incorporated with a NbN/SiO2/Al tuning circuit, and the latter with a Nb/SiO2/Al and a NbTiN/SiO2/Al tuning circuits. The noise performance, local-oscillator power requirement, IF bandwidth, and optimum embedding impedance are thoroughly characterized for the two types of distributed superconducting junction arrays.
In this paper we focus on the numerical simulation of the mixing behaviors of distributed superconducting junction arrays at 1.2 THz. A novel type of superconducting tunnel junctions, i.e., NbN/AlN/Nb, which have a relatively high gap voltage (4.3 mV) and can reach a critical current density as high as several tens of kA/cm 2 , are proposed for this characterization along with conventional Nb/AlOx/Nb junctions. The former is incorporated with a NbN/SiO 2 /Al tuning circuit, and the latter with a Nb/SiO 2 /Al and a NbTiN/SiO 2 /Al tuning circuits. The noise performance, local-oscillator power requirement, IF bandwidth, and optimum embedding impedance are thoroughly characterized for the two types of distributed superconducting junction arrays.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
With a gap frequency of 1.4 THz, all-NbN Superconductor-Insulator-Superconductor (SIS) junctions are potentially applicable to sensitive heterodyne mixers for THz astronomy and atmospheric research. In this paper, we report the design, fabrication, and performance characterization of a 0.5-THz waveguide SIS mixer incorporating twin NbN/AlN/NbN junctions and an NbN/MgO/NbN tuning circuit with no impedance transformers. The noise performance of two NbN SIS junctions with different tuning inductances is measured, compared with the simulated results without and with the multiple Andreev reflection (MAR) effect taken into account, and also compared with the video detection response. In addition, the IF-output-power stability and aging effect of fabricated NbN SIS junctions are investigated.
Superconducting qubit circuits require high quality low critical current density Josephson tunnel junctions. We have developed high quality epitaxial NbN/AlN/NbN tunnel junctions with critical current density, Jc, ranging from as low as a few A/cm2to a few tens of kA/cm2. In this work, we measured current-voltage characteristics for junctions with a Jc~ 32 A/cm2in the temperature range from 17 mK to above 6.7 K. All the junctions are in good quality and have a high gap voltage (>; 5.5 mV). We found that the junctions' sub-gap resistances were temperature dependent above 2.5 K and saturated at temperatures below 2.5 K. A junction sub-gap leakage current Irof about 23 pA was measured. The voltage noise power spectral density for 3 junctions with different sizes has been measured at the base temperature of 17 mK with the junctions biased above the gap voltage. The spectral densities clearly show 1/fbehavior at low frequency and are proportional to the junction's linear dimension.
Superconductor–insulator–superconductor (SIS) mixers remain the choice of heterodyne mixers for single-dish telescopes and interferometers at millimeter and submillimeter wavelengths. Compared with conventional Nb/AlOx/Nb superconducting tunnel junctions, Nb/AlN/NbN ones have larger gap voltage and may reach critical-current density beyond 10kA/cm2, which are both of particularly interest in developing broadband SIS mixers. Here we report on the design and measurement of an SIS mixer based on Nb/AlN/NbN parallel connected twin junctions (PCTJ) incorporating NbTiN/SiO2/Al microstrip circuit. The junctions have a gap voltage of 3.18mV and a critical-current density of 15kA/cm2. The measured receiver noise temperature reach 5hν/kB among 200-260GHz band, and the mixer’s fractional bandwidth is about 40% centered at 230GHz.
We report on the fabrication and properties of high current density NbN/AlN/NbN tunnel junctions for the application of superconducting SIS mixers in the submillimeter wave regions. Junctions having current densities as high as 50 kA/cm/sup 2/ exhibited a good Josephson tunneling behaviour, excellent terahertz response, and sensitive heterodyne mixing properties. Accurate values of junction capacitance were estimated by measuring dc-SQUID resonant steps for the design of tuning circuits. The measured specific capacitance gives values in the range of 20-200 fF//spl mu/m/sup 2/ for the current density range of 1-100 kA/cm/sup 2/. The NbN/AlN/NbN tunnel junctions were integrated with a NbN thin film antenna to investigate the terahertz responses and mixing tests in a quasi-optical testing system. Photon-assisted tunneling steps were clearly observed on the I-V curve with irradiation up to 1.02 THz, and a low-noise heterodyne mixing was demonstrated in the 300-GHz band.