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Advanced Optical Materials

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramid s with Embedded Silicon‐Vacancy Centers

Tzach Jaffe, Nina Felgen, Lior Gal, Lior Kornblum, Johann Peter Reithmaier, Cyril Popov, Meir Orenstein

Published Dec 3, 2018• 23 citations
Publisher

Abstract

Abstract The negatively charged silicon‐vacancy center (SiV) in diamond is a potential high‐quality source of single‐indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template‐assisted bottom‐up process for the creation of high‐quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefinition of high‐precision nanopillars by e‐beam lithography and dry etching, and subsequent epitaxial overgrowth during which Si atoms are introduced into diamond. The overgrown layer, including the nanopyramid arrays, is epitaxial as confirmed by comprehensive analyses. This diamond nanopyramid, hosting the SiVs, can pave the way toward efficient localized single‐photon source arrays and potentially outshine nanodiamonds and nanosized structures prepared by a top‐down method. The lateral confinement of the SiVs inside the deterministic nanosized pyramids enables their positioning at the center of cavities and optical structures for enhanced quantum efficiency and light–matter manipulation, and their employment as a system to explore collective coherent interactions between ensembles and confined light.

DOI
10.1002/adom.201800715

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Optica•Oct 20, 2017•40 citations
Abstract The negatively charged silicon‐vacancy center (SiV) in diamond is a potential high‐quality source of single‐indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template‐assisted bottom‐up process for the creation of high‐quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefinition of high‐precision nanopillars by e‐beam lithography and dry etching, and subsequent epitaxial overgrowth during which Si atoms are introduced into diamond. The overgrown layer, including the nanopyramid arrays, is epitaxial as confirmed by comprehensive analyses. This diamond nanopyramid, hosting the SiVs, can pave the way toward efficient localized single‐photon source arrays and potentially outshine nanodiamonds and nanosized structures prepared by a top‐down method. The lateral confinement of the SiVs inside the deterministic nanosized pyramids enables their positioning at the center of cavities and optical structures for enhanced quantum efficiency and light–matter manipulation, and their employment as a system to explore collective coherent interactions between ensembles and confined light.
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.
We present a new approach combining top down fabrication and bottom up overgrowth to create diamond photonic nanostructures in the form of single-crystalline diamond nanopyramids. Our approach relies on diamond nanopillars, that are overgrown with single-crystalline diamond to form pyramidal structures oriented along crystal facets. To characterize the photonic properties of the pyramids, color centers are created in a controlled way using ion implantation and annealing. We find very high collection efficiency from color centers close to the pyramid apex. We further show excellent smoothness and sharpness of our diamond pyramids with measured tip radii on the order of 10 nm. Our results offer interesting prospects for nanoscale quantum sensing using diamond color centers, where our diamond pyramids could be used as scanning probes for nanoscale imaging. There, our approach would offer significant advantages compared to the cone-shaped scanning probes which define the current state of the art.
The creation of single, negatively charged silicon vacancy (SiV−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single SiV− centers in diamond using low energy Si+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of SiV− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.
Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.