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arXiv:1701.04961

Complete Coherent Control of Silicon-Vacancies in Diamond Nanopillars Containing Single Defect Centers

Jingyuan Linda Zhang, Konstantinos G. Lagoudakis, Yan‐Kai Tzeng, Constantin Dory, Marina Radulaski, Yousif Kelaita, Kevin A. Fischer, Zhi‐Xun Shen, Nicholas A. Melosh, Steven Chu, Jelena Vuckovic A

Published Jan 18, 2017• 0 citations
arXivHTMLPDF

Abstract

Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon vacancy centers in diamond (SiV) offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye-Waller factor, while the possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times make them very promising candidates for qubits. Here, we have developed arrays of nanopillars containing single SiV centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the state of a single SiV center. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the state of individual SiV centers on picosecond timescales using ultrafast optical pulses. This work opens new opportunities towards the creation of a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.

DOI
10.48550/arxiv.1701.04961

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Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon vacancy centers in diamond (SiV) offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye-Waller factor, while the possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times make them very promising candidates for qubits. Here, we have developed arrays of nanopillars containing single SiV centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the state of a single SiV center. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the state of individual SiV centers on picosecond timescales using ultrafast optical pulses. This work opens new opportunities towards the creation of a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.
Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.
Abstract Complete control of the state of a quantum bit (qubit) is a fundamental requirement for any quantum information processing (QIP) system. In this context, all-optical control techniques offer the advantage of a well-localized and potentially ultrafast manipulation of individual qubits in multi-qubit systems. Recently, the negatively charged silicon vacancy centre (SiV − ) in diamond has emerged as a novel promising system for QIP due to its superior spectral properties and advantageous electronic structure, offering an optically accessible Λ -type level system with large orbital splittings. Here, we report on all-optical resonant as well as Raman-based coherent control of a single SiV − using ultrafast pulses as short as 1 ps, significantly faster than the centre’s phonon-limited ground state coherence time of about 40 ns. These measurements prove the accessibility of a complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV − centres.
High Resolution Image Download MS PowerPoint Slide The negatively charged silicon vacancy center (SiV – ) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV – centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV – with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV – for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.
The negatively charged silicon-vacancy (SiV^{-}) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼250 ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV^{-} electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV^{-} symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV^{-} spin with 89% fidelity. Coherent control of the SiV^{-} spin with microwave fields is used to demonstrate a spin coherence time T_{2} of 13 ms and a spin relaxation time T_{1} exceeding 1 s at 100 mK. These results establish the SiV^{-} as a promising solid-state candidate for the realization of quantum networks.