Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics

High-quality Nanometric Quantum Source: Epitaxially Grown Diamond Nano-pyramids with Silicon-Vacancy Centers

Tzach Jaffe, Nina Felgen, Lior Gal, Lior Kornblum, Cyril Popov, Johann Peter Reithmaier, Meir Orenstein

Published May 5, 2019• 0 citations
Publisher

Abstract

We present a deterministic template-assisted bottom-up process for creating high-quality nanoscale diamond pyramids incorporating optically active silicon vacancy centers (SiV). We achieved deterministic nano-localization and an extraction efficiency enhancement of 4 compared to bulk diamond. © 2019 The Author(s)
DOI
10.23919/cleo.2019.8750191

Related papers

High-quality Nanometric Quantum Source: Epitaxially Grown Diamond Nano-pyramids with Silicon-Vacancy Centers

Tzach Jaffe, Nina Felgen, Lior Gal +4 more

We present a deterministic template-assisted bottom-up process for creating high-quality nanoscale diamond pyramids incorporating optically active silicon vacancy centers (SiV). We achieved deterministic nano-localization and an extraction efficiency enhancement of 4 compared to bulk diamond.

Conference on Lasers and Electro-Optics•Jan 1, 2019•0 citations

Enhanced Quantum Nano-Sources Based on Silicon-Vacancy Centers in Epitaxially Grown Diamond Nano-Pyramids

Tzach Jaffe, Nina Felgen, Lior Gal +4 more

The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2019•0 citations

Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies

L. Nicolas, Tom Delord, Paul H. Huillery +2 more

Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.

arXiv:1804.05583•AIP Advances•Jun 1, 2018•15 citations

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramid s with Embedded Silicon‐Vacancy Centers

Tzach Jaffe, Nina Felgen, Lior Gal +4 more

Abstract The negatively charged silicon‐vacancy center (SiV) in diamond is a potential high‐quality source of single‐indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template‐assisted bottom‐up process for the creation of high‐quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefinition of high‐precision nanopillars by e‐beam lithography and dry etching, and subsequent epitaxial overgrowth during which Si atoms are introduced into diamond. The overgrown layer, including the nanopyramid arrays, is epitaxial as confirmed by comprehensive analyses. This diamond nanopyramid, hosting the SiVs, can pave the way toward efficient localized single‐photon source arrays and potentially outshine nanodiamonds and nanosized structures prepared by a top‐down method. The lateral confinement of the SiVs inside the deterministic nanosized pyramids enables their positioning at the center of cavities and optical structures for enhanced quantum efficiency and light–matter manipulation, and their employment as a system to explore collective coherent interactions between ensembles and confined light.

Advanced Optical Materials•Dec 3, 2018•23 citations

A bright nanowire single photon source

Luca Marseglia, Kasturi Saha, Ashok Ajoy +10 more

Silicon-vacancy (SiV) centers in diamond are bright sources of indistinguishable single photons. We report fabrication of nanowires coupled to single SiV by deterministic ion implantation, yielding greatly enhanced light coupling compared to SiV in bulk.

Conference on Lasers and Electro-Optics•Jan 1, 2016•0 citations

Quantum Nano-Jewelry: Plasmonic Addressing of Single-Photon Emitters in High-Quality Diamond Nanostructures

Tzach Jaffe, Nina Felgen, Lior Gal +3 more

The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2019•0 citations
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
Abstract The negatively charged silicon‐vacancy center (SiV) in diamond is a potential high‐quality source of single‐indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template‐assisted bottom‐up process for the creation of high‐quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefinition of high‐precision nanopillars by e‐beam lithography and dry etching, and subsequent epitaxial overgrowth during which Si atoms are introduced into diamond. The overgrown layer, including the nanopyramid arrays, is epitaxial as confirmed by comprehensive analyses. This diamond nanopyramid, hosting the SiVs, can pave the way toward efficient localized single‐photon source arrays and potentially outshine nanodiamonds and nanosized structures prepared by a top‐down method. The lateral confinement of the SiVs inside the deterministic nanosized pyramids enables their positioning at the center of cavities and optical structures for enhanced quantum efficiency and light–matter manipulation, and their employment as a system to explore collective coherent interactions between ensembles and confined light.
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.