Optical cavity with backside optical coupling is one of the prevalent optical structures for superconducting nanowire single photon detector. A single layer anti-reflection coating (ARC) on the backside of the substrate is often adopted to enhance the transmittance to the substrate. We here apply a multilayer ARC to further increase the transmittance from 94.5% to 99.5%. An NbTiN SNSPD made on such a substrate with cavity structure presents a system detection efficiency of 90.1% at a dark count rate (DCR) of 100 Hz, which is the best value reported for backside optical coupled SNSPD at 1550 nm. It shows a timing jitter of ∼40.7 ps and the recovery time constant of ∼22.9 ns.
Optical cavity with backside optical coupling is one of the prevalent optical structures for superconducting nanowire single photon detector. A single layer anti-reflection coating (ARC) on the backside of the substrate is often adopted to enhance the transmittance to the substrate. We here apply a multilayer ARC to further increase the transmittance from 94.5% to 99.5%. An NbTiN SNSPD made on such a substrate with cavity structure presents a system detection efficiency of 90.1% at a dark count rate (DCR) of 100 Hz, which is the best value reported for backside optical coupled SNSPD at 1550 nm. It shows a timing jitter of ∼40.7 ps and the recovery time constant of ∼22.9 ns.
Superconducting nanowire single-photon detectors (SNSPDs) struggle to balance high system detection efficiency (SDE) and low polarization dependence. This work proposes a co-design of the NbN films, α -Si anti-reflection coating (ARC), and SiO 2 /Ta 2 O 5 distributed Bragg reflector (DBR) to reduce the polarization-dependent optical response of the nanowires. Simulations based on rigorous coupled-wave analysis (RCWA) and the finite-element method show absorptance above 99% for both transverse-electric (TE) and transverse-magnetic (TM) polarizations and absorptance above 90% over the wavelength range from 1530 to 1640 nm. Experimentally, the device achieves 97% SDE at 1530 nm (polarization sensitivity, PS = 1.1), PS < 1.3 over 1490–1640 nm, 39.5 ns recovery time, and 63.5 ps timing jitter. Retaining a conventional single-layer meander nanowire geometry, this design unifies high efficiency and polarization insensitivity, advancing SNSPD applications in quantum communications, free-space links, and single-photon imaging.
Superconducting nanowire single photon detectors with an optical resonant cavity structure are fabricated directly on the single crystal substrate. In order to enhance the photons absorption of incident light and improve system detection efficiency (SDE) efficiently, the structure of SNSPD was designed and optimized using the finite-difference time-domain analysis for different kinds of substrates. The NbN-SNSPDs fabricated on different substrates are measured and compared. The SDE of NbN-SNSPD on MgO substrate reaches 66 % at the wavelength of 940nm at a dark count rate of 100 cps by illuminating from the back of the device through single mode optical fiber.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
We have developed a practical superconducting nanowire single photon detector (SNSPD) system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SNSPD devices were fabricated from high-quality niobium nitride (NbN) ultra-thin films that were epitaxially grown on single-crystal MgO substrates, and optical cavity structure were applied for improvement of photo absorption efficiency. The SNSPD system was developed based on a compact Gifford-McMahon (GM) cryocooler, in which SNSPD can operate continuously at temperature of 2.9 K +/- 10 mK with low power consumption without any liquid cryogens. The system detection efficiencies at 1550 nm wavelength (at a 100 Hz dark count rate) were found to be 2.6% for device without optical cavity and 21% for device with optical cavity. The response speed of devices showed maximally 200 MHz with 5 × 5 mm square device, and timing jitter of 100 ps full width at a half maximum (FWHM) was observed.
Increasing the detection efficiency (DE) is a hot issue in the development of the superconducting nanowire single photon detector (SNSPD). In this work, a cavity-integrated structure coupled to the SNSPD is used to enhance the light absorption of nanowire. Ultra-thin Nb films are successfully prepared by magnetron sputtering, which are used to fabricate Nb/Al SNSPD with the curve of 100 nm and the square area of 4 × 4 μm 2 by sputtering and the lift-off method. To characterize the optical and electrical performance of the cavity-integrated SNSPD, a reliable cryogenic research system is built up based on a He 3 system. To satisfy the need of light coupling, a packaging structure with collimator is conducted. Both DE and the dark count rates increase with l b . It is also found that the DE of SNSPD with cavities can be up to 0.17% at the temperature of 0.7K under the infrared light of 1550 nm, which is obviously higher than that of the SNSPD directly fabricated upon silicon without any cavity structure.