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Laser Physics

Scheme of an optical transistor based on phase modulation

Jiawei Yang, Zhiguo Wang, Yanyong Sun, Yanpeng Zhang

Published Sep 3, 2018• 0 citations
Publisher

Abstract

Abstract We study the realization of the switching, routing and amplifying functions of an optical transistor by means of modulating the probe transmission signal and the four-wave mixing band gap signal by changing the relative phase and the nonlinear phase shift in an electromagnetically induced transparency medium based on an inverted Y-type four-level atomic system experimentally and theoretically. By changing the frequency detuning of relevant fields, we can change the nonlinear phase shift and correspondingly realize different functions. Through altering the incident angle of the dressing field, we can obtain different relative phases and realize further modulation for all-optical switches, routers and amplifiers. This scheme offers more flexible control parameters for the modulation of optical devices used in quantum information processing.

DOI
10.1088/1555-6611/aadaa2

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Abstract We study the realization of the switching, routing and amplifying functions of an optical transistor by means of modulating the probe transmission signal and the four-wave mixing band gap signal by changing the relative phase and the nonlinear phase shift in an electromagnetically induced transparency medium based on an inverted Y-type four-level atomic system experimentally and theoretically. By changing the frequency detuning of relevant fields, we can change the nonlinear phase shift and correspondingly realize different functions. Through altering the incident angle of the dressing field, we can obtain different relative phases and realize further modulation for all-optical switches, routers and amplifiers. This scheme offers more flexible control parameters for the modulation of optical devices used in quantum information processing.
We first investigate the probe transmission signal (PTS) and the four wave mixing band gap signal (FWM BGS) modulated simultaneously by the relative phase and the nonlinear phase shift in the photonic band gap (PBG) structure. The switch between the absorption enhancement of PTS and the transmission enhancement of PTS with the help of changing the relative phase and the nonlinear phase shift is obtained in inverted Y-type four level atomic system experimentally and theoretically. The corresponding switch in PTS can be used to realize all optical switches. On other hand, the relative phase and the nonlinear phase shift also play the vital role to modulate the intensity of FWM BGS reflected from the PBG structure. And it can be potentially used to realize the optical amplifier.
Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.
Abstract For the first time, we have experimentally and theoretically researched the double dressing effect on the six wave mixing photonic band gap signal (SWM BGS), probe transmission signal (PTS) and fluorescence signal (FLS) in an inverted Y-type four level atomic system. We investigate the characteristics of the SMW BGS, PTS and FLS, which can be controlled by beam, power and detuning. At the same time, the relative phase which is caused by the incident angle of dressing beams plays a vital role in modulating the intensity of the SWM BGS, PTS and FLS. Such a scheme has potential applications in optical diodes, amplifiers and quantum information processing.
For the first time, we experimentally and theoretically research about the probe transmission signal (PTS), the reflected four wave mixing band gap signal(FWM BGS) and fluorescence signal (FLS) under the double dressing effect in an inverted Y-type four level system. FWM BGS results from photonic band gap structure. We demonstrate that the characteristics of PTS, FWM BGS and FLS can be controlled by power, phase and the frequency detuning of the dressing beams. It is observed in our experiment that FWM BGS switches from suppression to enhancement, corresponding to the switch from transmission enhancement to absorption enhancement in the PTS with changing the relative phase. We also observe the relation among the three signals, which satisfy the law of conservation of energy. Such scheme could have potential applications in optical diodes, amplifiers and quantum information processing.
We experimentally study the phase regulated switch between electromagnetically induced transparency and electromagnetically induced absorption in probe transmission signal and the conversion between enhancement and suppression in four-wave mixing and fluorescence signals for the first time. By changing the relative phase, electromagnetically induced transparency can be converted into electromagnetically induced absorption. In this process, the conversion from suppression to enhancement is also obtained in four-wave mixing and fluorescence signals. This research can be applied in non-linear optical device like optical switch and optical wavelength convertor.
We first investigate the phase control of the switch between bright and dark states in the transmitted probe, four-wave mixing (FWM) and fluorescence signals in a four-level 85Rb atomic system. With the relative phase modulated from 0 to −π, pure dark state in the FWM and fluorescence channels can be switched to pure bright state, corresponding to the switch from electromagnetically induced transparency to electromagnetically induced absorption. Meanwhile, the results could be obtained in solid crystals. Such phase controlled switch could have potential applications in optical communication and quantum information processing.