Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Scientific Reports

Analogy of transistor function with modulating photonic band gap in electromagnetically induced grating

Zhiguo Wang, Zakir Ullah, Mengqin Gao, Dan Zhang, Yiqi Zhang, Hong Gao, Yanpeng Zhang

Published Sep 9, 2015• 10 citations
Publisher

Abstract

Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.

DOI
10.1038/srep13880

Related papers

Scheme of an optical transistor based on phase modulation

Jiawei Yang, Zhiguo Wang, Yanyong Sun +1 more

Abstract We study the realization of the switching, routing and amplifying functions of an optical transistor by means of modulating the probe transmission signal and the four-wave mixing band gap signal by changing the relative phase and the nonlinear phase shift in an electromagnetically induced transparency medium based on an inverted Y-type four-level atomic system experimentally and theoretically. By changing the frequency detuning of relevant fields, we can change the nonlinear phase shift and correspondingly realize different functions. Through altering the incident angle of the dressing field, we can obtain different relative phases and realize further modulation for all-optical switches, routers and amplifiers. This scheme offers more flexible control parameters for the modulation of optical devices used in quantum information processing.

Laser Physics•Sep 3, 2018•0 citations

Photonic band gap materials: towards an all-optical transistor

Marian Florescu A

The transmission of information as optical signals encoded on light waves traveling through optical fibers and optical networks is increasingly moving to shorter and shorter distance scales. In the near future, optical networking is poised to supersede conventional transmission over electric wires and electronic networks for computer-to-computer communications, chip-to-chip communications, and even on-chip communications. The ever-increasing demand for faster and more reliable devices to process the optical signals offers new opportunities in developing all-optical signal processing systems (systems in which one optical signal controls another, thereby adding "intelligence" to the optical networks). All-optical switches, two-state and many-state all-optical memories, all-optical limiters, all-optical discriminators and all-optical transistors are only a few of the many devices proposed during the last two decades. The "all-optical" label is commonly used to distinguish the devices that do not involve dissipative electronic transport and require essentially no electrical communication of information. The all-optical transistor action was first observed in the context of optical bistability [1] and consists in a strong differential gain regime, in which, for small variations in the input intensity, the output intensity has a very strong variation. This analog operation is for all-optical input what transistor action is for electrical inputs.

Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging•Aug 29, 2017•0 citations

All-Optical Transistor Action in Photonic Band Gap Materials

Marian Florescu A, Sajeev John

We describe all-optical transistor action in photonic band gap materials doped with active atoms. In the presence of a photonic band gap (PBG) material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By changing the laser field intensity in the neighborhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The switching action in a PBG material is not associated with operating near a narrow cavity resonance with conventional trade-off between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analyzing the absorption spectrum of a second probe laser beam and we show that the probe beam experience a substantial differential gain by slight intensity modulations in the control laser field.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 1, 2003•1 citation

Phase Modulation of Photonic Band Gap Signal

Zhiguo Wang, Mengqin Gao, Abdul Rasheed Mahesar +1 more

We first investigate the probe transmission signal (PTS) and the four wave mixing band gap signal (FWM BGS) modulated simultaneously by the relative phase and the nonlinear phase shift in the photonic band gap (PBG) structure. The switch between the absorption enhancement of PTS and the transmission enhancement of PTS with the help of changing the relative phase and the nonlinear phase shift is obtained in inverted Y-type four level atomic system experimentally and theoretically. The corresponding switch in PTS can be used to realize all optical switches. On other hand, the relative phase and the nonlinear phase shift also play the vital role to modulate the intensity of FWM BGS reflected from the PBG structure. And it can be potentially used to realize the optical amplifier.

Scientific Reports•Jun 21, 2016•7 citations

A single-molecule optical transistor

Jaesuk Hwang, M. Pototschnig, R. Lettow +4 more

Quantum information processing systems and related technologies are likely to involve switching and amplification functions in ultrasmall objects such as nanotubes. In today's electronic devices the transistor performs these functions. A 'quantum age' equivalent of the conventional transistor would, ideally, use photons rather than electrons as information carriers because of their speed and robustness against decoherence. But robustness also stops them being easily controlled. Now a team from optETH and ETH in Zurich demonstrates the realization of a single-molecule optical transistor. In it, a single dye molecule coherently attenuates or amplifies a tightly focused laser beam, depending on the power of a second 'gating' beam. The transistor is the most fundamental building block in present-day technologies. For the purpose of quantum information processing schemes and for the development of a 'quantum computer', photons are attractive information carriers because of their speed and robustness against decoherence. However, their robustness also prevents them from being easily controlled; despite this, experiments now show the realization of a quantum optical transistor. The transistor is one of the most influential inventions of modern times and is ubiquitous in present-day technologies. In the continuing development of increasingly powerful computers as well as alternative technologies based on the prospects of quantum information processing, switching and amplification functionalities are being sought in ultrasmall objects, such as nanotubes, molecules or atoms1,2,3,4,5,6,7,8,9. Among the possible choices of signal carriers, photons are particularly attractive because of their robustness against decoherence, but their control at the nanometre scale poses a significant challenge as conventional nonlinear materials become ineffective. To remedy this shortcoming, resonances in optical emitters can be exploited, and atomic ensembles have been successfully used to mediate weak light beams7. However, single-emitter manipulation of photonic signals has remained elusive and has only been studied in high-finesse microcavities10,11,12,13 or waveguides8,14. Here we demonstrate that a single dye molecule can operate as an optical transistor and coherently attenuate or amplify a tightly focused laser beam, depending on the power of a second ‘gating’ beam that controls the degree of population inversion. Such a quantum optical transistor has also the potential for manipulating non-classical light fields down to the single-photon level. We discuss some of the hurdles along the road towards practical implementations, and their possible solutions.

IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)•Oct 1, 2009•12 citations

Tunable photonic metamaterials

Jin‐Hui Wu, Andrzej Raczyński, Jarosław Zaremba +3 more

We illustrate a mechanism based on coherent optical nonlinearities to realize optically tunable photonic crystals built from media supporting electromagnetically induced transparency. These exhibit specific periodic patterns where a light probe can experience a fully developed photonic band-gap with negligible absorption. An analytical method based on a two-mode approximation is developed to study the optical response of such a periodically modulated medium driven into a regime of standing-wave electromagnetically induced transparency. A comparison with a transfer matrix approach and with techniques based on the coupled Maxwell–Liouville equations shows that our method is very accurate to describe the optical properties of such photonic metamaterials in the frequency region of interest. Nearly perfect reflectivities may be attained for ultracold 87Rb atoms samples which are seen to reflect with little loss and deformation light pulses whose frequency components are contained within the gap. When the same mechanism is implemented for inhomogeneously broadened optical transitions of nitrogen-vacancy centers in diamond, which is more amenable to device applications, fully developed photonic band-gap structures with negligible absorption, reflectivities very close to unity and sufficiently large bandwidths may also be attained. We further examine more flexible schemes based on four level systems under double driving conditions showing more accurate and efficient coherent optical control of the photonic band-gap. The remarkable experimental simplicity of the schemes that we presented is set to ease quantum nonlinear optics applications.

Journal of Modern Optics•Oct 24, 2008•18 citations
Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.
Abstract We study the realization of the switching, routing and amplifying functions of an optical transistor by means of modulating the probe transmission signal and the four-wave mixing band gap signal by changing the relative phase and the nonlinear phase shift in an electromagnetically induced transparency medium based on an inverted Y-type four-level atomic system experimentally and theoretically. By changing the frequency detuning of relevant fields, we can change the nonlinear phase shift and correspondingly realize different functions. Through altering the incident angle of the dressing field, we can obtain different relative phases and realize further modulation for all-optical switches, routers and amplifiers. This scheme offers more flexible control parameters for the modulation of optical devices used in quantum information processing.
The transmission of information as optical signals encoded on light waves traveling through optical fibers and optical networks is increasingly moving to shorter and shorter distance scales. In the near future, optical networking is poised to supersede conventional transmission over electric wires and electronic networks for computer-to-computer communications, chip-to-chip communications, and even on-chip communications. The ever-increasing demand for faster and more reliable devices to process the optical signals offers new opportunities in developing all-optical signal processing systems (systems in which one optical signal controls another, thereby adding "intelligence" to the optical networks). All-optical switches, two-state and many-state all-optical memories, all-optical limiters, all-optical discriminators and all-optical transistors are only a few of the many devices proposed during the last two decades. The "all-optical" label is commonly used to distinguish the devices that do not involve dissipative electronic transport and require essentially no electrical communication of information. The all-optical transistor action was first observed in the context of optical bistability [1] and consists in a strong differential gain regime, in which, for small variations in the input intensity, the output intensity has a very strong variation. This analog operation is for all-optical input what transistor action is for electrical inputs.
We describe all-optical transistor action in photonic band gap materials doped with active atoms. In the presence of a photonic band gap (PBG) material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By changing the laser field intensity in the neighborhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The switching action in a PBG material is not associated with operating near a narrow cavity resonance with conventional trade-off between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analyzing the absorption spectrum of a second probe laser beam and we show that the probe beam experience a substantial differential gain by slight intensity modulations in the control laser field.
We first investigate the probe transmission signal (PTS) and the four wave mixing band gap signal (FWM BGS) modulated simultaneously by the relative phase and the nonlinear phase shift in the photonic band gap (PBG) structure. The switch between the absorption enhancement of PTS and the transmission enhancement of PTS with the help of changing the relative phase and the nonlinear phase shift is obtained in inverted Y-type four level atomic system experimentally and theoretically. The corresponding switch in PTS can be used to realize all optical switches. On other hand, the relative phase and the nonlinear phase shift also play the vital role to modulate the intensity of FWM BGS reflected from the PBG structure. And it can be potentially used to realize the optical amplifier.
Quantum information processing systems and related technologies are likely to involve switching and amplification functions in ultrasmall objects such as nanotubes. In today's electronic devices the transistor performs these functions. A 'quantum age' equivalent of the conventional transistor would, ideally, use photons rather than electrons as information carriers because of their speed and robustness against decoherence. But robustness also stops them being easily controlled. Now a team from optETH and ETH in Zurich demonstrates the realization of a single-molecule optical transistor. In it, a single dye molecule coherently attenuates or amplifies a tightly focused laser beam, depending on the power of a second 'gating' beam. The transistor is the most fundamental building block in present-day technologies. For the purpose of quantum information processing schemes and for the development of a 'quantum computer', photons are attractive information carriers because of their speed and robustness against decoherence. However, their robustness also prevents them from being easily controlled; despite this, experiments now show the realization of a quantum optical transistor. The transistor is one of the most influential inventions of modern times and is ubiquitous in present-day technologies. In the continuing development of increasingly powerful computers as well as alternative technologies based on the prospects of quantum information processing, switching and amplification functionalities are being sought in ultrasmall objects, such as nanotubes, molecules or atoms1,2,3,4,5,6,7,8,9. Among the possible choices of signal carriers, photons are particularly attractive because of their robustness against decoherence, but their control at the nanometre scale poses a significant challenge as conventional nonlinear materials become ineffective. To remedy this shortcoming, resonances in optical emitters can be exploited, and atomic ensembles have been successfully used to mediate weak light beams7. However, single-emitter manipulation of photonic signals has remained elusive and has only been studied in high-finesse microcavities10,11,12,13 or waveguides8,14. Here we demonstrate that a single dye molecule can operate as an optical transistor and coherently attenuate or amplify a tightly focused laser beam, depending on the power of a second ‘gating’ beam that controls the degree of population inversion. Such a quantum optical transistor has also the potential for manipulating non-classical light fields down to the single-photon level. We discuss some of the hurdles along the road towards practical implementations, and their possible solutions.
We illustrate a mechanism based on coherent optical nonlinearities to realize optically tunable photonic crystals built from media supporting electromagnetically induced transparency. These exhibit specific periodic patterns where a light probe can experience a fully developed photonic band-gap with negligible absorption. An analytical method based on a two-mode approximation is developed to study the optical response of such a periodically modulated medium driven into a regime of standing-wave electromagnetically induced transparency. A comparison with a transfer matrix approach and with techniques based on the coupled Maxwell–Liouville equations shows that our method is very accurate to describe the optical properties of such photonic metamaterials in the frequency region of interest. Nearly perfect reflectivities may be attained for ultracold 87Rb atoms samples which are seen to reflect with little loss and deformation light pulses whose frequency components are contained within the gap. When the same mechanism is implemented for inhomogeneously broadened optical transitions of nitrogen-vacancy centers in diamond, which is more amenable to device applications, fully developed photonic band-gap structures with negligible absorption, reflectivities very close to unity and sufficiently large bandwidths may also be attained. We further examine more flexible schemes based on four level systems under double driving conditions showing more accurate and efficient coherent optical control of the photonic band-gap. The remarkable experimental simplicity of the schemes that we presented is set to ease quantum nonlinear optics applications.