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Materials Research Express

High-speed electro-optical switching in an InGaAsP/InP quantum well nanostructure

Mostafa Sahrai, Solmaz Ebadollahi-Bakhtevar, H. Tajalli, Azar Vafafard

Published Aug 23, 2018• 2 citations
Publisher

Abstract

An InGaAsP/InP quantum well nanostructure sandwiched by distributed Bragg reflector mirrors (DBR) is employed as a high-speed optical switch based on optical bistability.The switching time between two stable states of bistable curve is estimated about 50 ps.We prove that OB/OM can be achieved just by the appropriate choice of laser intensities, tunneling rate, and detuning of coupling laser field.Moreover, we show that the superluminal light propagation can be obtained in this system by adjusting the tunneling rate.As a consequence, the proposed model can also be applied in rapid telecommunication.

DOI
10.1088/2053-1591/aadc9b

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IEEE Photonics Technology Letters•Apr 1, 1996•12 citations
An InGaAsP/InP quantum well nanostructure sandwiched by distributed Bragg reflector mirrors (DBR) is employed as a high-speed optical switch based on optical bistability.The switching time between two stable states of bistable curve is estimated about 50 ps.We prove that OB/OM can be achieved just by the appropriate choice of laser intensities, tunneling rate, and detuning of coupling laser field.Moreover, we show that the superluminal light propagation can be obtained in this system by adjusting the tunneling rate.As a consequence, the proposed model can also be applied in rapid telecommunication.
Optical bistability (OB) and optical multistability (OM) are investigated in a triple coupled quantum wells system inside a semiconductor cavity sandwiched by distributed Bragg reflector mirrors. By proper manipulation of the optical and electrical parameters, the behaviors of OB and OM can be efficiently controlled. We show that, by tuning the tunneling rates between the quantum wells, the threshold and hysteresis cycle of OB and OM can be engineered. The effect of the incoherent pump field as well as the cooperation parameter on creation of OB is also discussed.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
Abstract Based on a GaAs/AlGaAs quadruple-coupled quantum dot heterostructure, an optical switch for controlling superluminal and subluminal light propagation is suggested. The transient and steady state behaviour of the absorption and dispersion of a probe pulse laser field through a quadruple quantum dot molecule are studied. We show that the group velocity of a light pulse can be controlled from superluminal to subluminal, or vice versa, by controlling the tunnelling rates between the quantum dots. The required switching time is calculated and we find it to be about 8 ps. We also investigated a method for the all-optical switching of probe field absorption from a large amount to nearly zero just by applying an incoherent pumping field. We estimated the required switching time for this case to be between 3 and 14 ps.
Optical bistability in a single quantum well waveguide resonator in the InP/InGaAsP material system is demonstrated. High contrast ratio (≳3:1) and switching at low power (≊1.5 mW) was obtained by using a single quantum well at a wavelength near the maximum nonlinear refractive index change and by depositing a reflective coating on the rear end of the waveguide. Clear optical bistability is observed in a wide wavelength range of 1480–1525 nm. Due to the low input power, cw operation of the device was possible at room temperature.
We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.