Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Experimental and Theoretical Physics Letters

On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity

A. A. Demenev, Daniil Domaretskiy, A.L. Parakhonsky, M. V. Lebedev

Published Oct 1, 2017• 3 citations
Publisher

Abstract

It was shown in JETP Lett. 102 , 508 (2015) that the intensity correlation function of the emission from a high-quality-factor semiconductor microcavity under resonant optical pumping exhibits an oscillatory behavior with an unexpectedly long oscillation period and a long decay time, which fall in the nanosecond range. A further investigation demonstrates that the origin of these oscillations is not related to the weak Rabi interaction between long-lived localized exciton states in the quantum well and the electromagnetic field of the microcavity mode. It proves that the semiconductor microcavity plays a secondary role in the observation of nonclassical light: it provides the spectral selection of the modes of the pump laser. We believe that intrinsic instabilities lead to the chaotic excitation of spiking in the laser modes under a constant operating current.

DOI
10.1134/s0021364017200073

Related papers

Generation of nonclassical light upon resonant excitation of a semiconductor microcavity

M. V. Lebedev, A.L. Parakhonsky, A. A. Demenev

Strong correlations in the fluctuations of the intensity of emission from a semiconductor microcavity under resonant laser excitation are observed. The intensity correlation function exhibits an unusual oscillatory behavior with an unexpectedly long oscillation period and decay time. The visibility of the correlation function reaches 0.81. Long oscillation times are attributed to the Rabi frequency characterizing weak coupling between the electromagnetic field of the semiconductor microcavity mode and long-lived exciton states localized by the random potential of the quantum well. For a laser excitation power density of 400 W/cm 2 , the power density of the radiation emitted by the microcavity is 12 W/cm 2 , which corresponds to the total flux of nonclassical light of 1.5 × 10 15 photons/s from an excited spot 50 μm in diameter. Thus, a microcavity can serve as a bright emitter of nonclassical light.

Journal of Experimental and Theoretical Physics Letters•Oct 1, 2015•3 citations

The formation of long-lived high-correlated states of light and polarization in high-quality semiconductor microcavity at the resonant laser excitation

A. A. Demenev, С. В. Новиков, Daniil Domaretskiy +2 more

The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and damping times of a nanosecond range. It was shown that the oscillations are not attributed to weak Rabi interaction between long-lived exciton states and intracavity electromagnetic field. The study of a response with high spectral resolution had revealed that the oscillations arise if a spectral position as well as a period of longitudinal laser modes is similar to modulation components of a microcavity transmission spectrum.

arXiv:1612.00954•Dec 3, 2016•0 citations

Dynamics of Coherently Excited Semiconductor Microcavities

June‐Koo Kevin Rhee, Theodore B. Norris, Yasuhiko Arakawa +2 more

Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.

International Conference on Ultrafast Phenomena•Jan 1, 1994•0 citations

Observation of non-classical light in semiconductor microcavities

Lebedev, Mikhail, A.L. Parakhonsky, A. A. Demenev

Semiconductor microcavities are widely used to study collective interactions of cavity exciton-polaritons leading to their condensation phenomenon. Exciton-light interaction is highly enhanced in such structures due to the resonance enhancement of the electromagnetic field inside the high quality cavity. Considerably lower interest is concerned to exciton states non-resonant with the cavity mode for which the exciton-photon interaction is strongly reduced due to the existence of the cavity. We point out here that these states are responsible for non-classical light generation in semiconductor microcavities.

arXiv:1407.4068•Jul 15, 2014•0 citations

Time-resolved study of vacuum Rabi oscillations in a semiconductor microcavity

June‐Koo Kevin Rhee, Theodore B. Norris, Yasuhiko Arakawa +2 more

Recent progress in vertical surface-emitting-laser-diode technology has raised considerable interest in cavity-QED effects in high-quality vertical semiconductor microcavities. When an excitonic transition and a single cavity mode are strongly coupled, the normal modes of the system are coupled modes split by the vacuum-Rabi frequency, corresponding in the time domain to an oscillation of the excitation between modes of exciton and photon character. Recently, the vacuum-Rabi splitting and preliminary observations of time-domain oscillation in semiconductor quantum microcavities have been reported.1,2 In this paper we investigate rigorously the time-domain vacuum-Rabi oscillation by femtosecond upconversion and pump-probe techniques.

•May 8, 1994•2 citations

Nonlinear optical processes in semiconductor microcavities and sodium vapor

David Wick

Nonlinear optical phenomena in both semiconductor microcavities and sodium vapor are investigated. Systems displaying atomic and excitonic coupling are studied in detail in order to unravel underlying physical principles. Possible applications for these systems are evaluated where appropriate. Normal-mode coupling (NMC) in a semiconductor microcavity is achieved when a narrow-linewidth quantum well exciton resonance is coincident with the cavity mode of a high-finesse microcavity. This interaction leads to a double-peaked spectrum in either transmission, reflection, or photoluminescence (PL). The high-quality microcavities studied here at liquid-Helium temperatures reveal intensity dependent behavior that has not previously been observed. Nonlinear saturation of the exciton leads to a spectral broadening of the excitonic absorption without a significant loss in oscillator strength. This results in a reduction of the two transmission peaks with almost no change in the splitting between the peaks. Such behavior is easily explained using phenomenological nonlinear dispersion theory. In this nonlinear regime, the luminescence from the microcavity shows a gradual transition from the nonperturbative regime of NMC to lasing with increasing excitation. The observed behavior is explained by density-dependent changes in both the transmission of the microcavity and the bare-exciton emission, rather than a boson-condensation of excitons which has been previously proposed. An intermediate-finesse microcavity also modifies the emission distribution from a bulk-semiconductor at room temperature. Angularly resolved emission spectra and quantum efficiency measurements show the PL is strongly dependent on the reflectivity of the microcavity. Unfortunately, the enhancement in the decay rate of excitons due to high-reflectivity mirrors seen previously by our group does not result in an increased quantum efficiency. High-gain optical-wavefront amplification in atomic sodium vapor is demonstrated via both the three-photon effect and stimulated Raman scattering (SRS). In both cases, single-pass weak-field gain of nearly 400 is achieved with only 800 mW of pump power near 589 nm. In the case of SRS, phase preservation of the amplified wavefront, which is necessary in adaptive imaging applications, is also demonstrated.

•Jan 1, 1997•1 citation
It was shown in JETP Lett. 102 , 508 (2015) that the intensity correlation function of the emission from a high-quality-factor semiconductor microcavity under resonant optical pumping exhibits an oscillatory behavior with an unexpectedly long oscillation period and a long decay time, which fall in the nanosecond range. A further investigation demonstrates that the origin of these oscillations is not related to the weak Rabi interaction between long-lived localized exciton states in the quantum well and the electromagnetic field of the microcavity mode. It proves that the semiconductor microcavity plays a secondary role in the observation of nonclassical light: it provides the spectral selection of the modes of the pump laser. We believe that intrinsic instabilities lead to the chaotic excitation of spiking in the laser modes under a constant operating current.
Strong correlations in the fluctuations of the intensity of emission from a semiconductor microcavity under resonant laser excitation are observed. The intensity correlation function exhibits an unusual oscillatory behavior with an unexpectedly long oscillation period and decay time. The visibility of the correlation function reaches 0.81. Long oscillation times are attributed to the Rabi frequency characterizing weak coupling between the electromagnetic field of the semiconductor microcavity mode and long-lived exciton states localized by the random potential of the quantum well. For a laser excitation power density of 400 W/cm 2 , the power density of the radiation emitted by the microcavity is 12 W/cm 2 , which corresponds to the total flux of nonclassical light of 1.5 × 10 15 photons/s from an excited spot 50 μm in diameter. Thus, a microcavity can serve as a bright emitter of nonclassical light.
The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and damping times of a nanosecond range. It was shown that the oscillations are not attributed to weak Rabi interaction between long-lived exciton states and intracavity electromagnetic field. The study of a response with high spectral resolution had revealed that the oscillations arise if a spectral position as well as a period of longitudinal laser modes is similar to modulation components of a microcavity transmission spectrum.
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.
Semiconductor microcavities are widely used to study collective interactions of cavity exciton-polaritons leading to their condensation phenomenon. Exciton-light interaction is highly enhanced in such structures due to the resonance enhancement of the electromagnetic field inside the high quality cavity. Considerably lower interest is concerned to exciton states non-resonant with the cavity mode for which the exciton-photon interaction is strongly reduced due to the existence of the cavity. We point out here that these states are responsible for non-classical light generation in semiconductor microcavities.
Recent progress in vertical surface-emitting-laser-diode technology has raised considerable interest in cavity-QED effects in high-quality vertical semiconductor microcavities. When an excitonic transition and a single cavity mode are strongly coupled, the normal modes of the system are coupled modes split by the vacuum-Rabi frequency, corresponding in the time domain to an oscillation of the excitation between modes of exciton and photon character. Recently, the vacuum-Rabi splitting and preliminary observations of time-domain oscillation in semiconductor quantum microcavities have been reported.1,2 In this paper we investigate rigorously the time-domain vacuum-Rabi oscillation by femtosecond upconversion and pump-probe techniques.
Nonlinear optical phenomena in both semiconductor microcavities and sodium vapor are investigated. Systems displaying atomic and excitonic coupling are studied in detail in order to unravel underlying physical principles. Possible applications for these systems are evaluated where appropriate. Normal-mode coupling (NMC) in a semiconductor microcavity is achieved when a narrow-linewidth quantum well exciton resonance is coincident with the cavity mode of a high-finesse microcavity. This interaction leads to a double-peaked spectrum in either transmission, reflection, or photoluminescence (PL). The high-quality microcavities studied here at liquid-Helium temperatures reveal intensity dependent behavior that has not previously been observed. Nonlinear saturation of the exciton leads to a spectral broadening of the excitonic absorption without a significant loss in oscillator strength. This results in a reduction of the two transmission peaks with almost no change in the splitting between the peaks. Such behavior is easily explained using phenomenological nonlinear dispersion theory. In this nonlinear regime, the luminescence from the microcavity shows a gradual transition from the nonperturbative regime of NMC to lasing with increasing excitation. The observed behavior is explained by density-dependent changes in both the transmission of the microcavity and the bare-exciton emission, rather than a boson-condensation of excitons which has been previously proposed. An intermediate-finesse microcavity also modifies the emission distribution from a bulk-semiconductor at room temperature. Angularly resolved emission spectra and quantum efficiency measurements show the PL is strongly dependent on the reflectivity of the microcavity. Unfortunately, the enhancement in the decay rate of excitons due to high-reflectivity mirrors seen previously by our group does not result in an increased quantum efficiency. High-gain optical-wavefront amplification in atomic sodium vapor is demonstrated via both the three-photon effect and stimulated Raman scattering (SRS). In both cases, single-pass weak-field gain of nearly 400 is achieved with only 800 mW of pump power near 589 nm. In the case of SRS, phase preservation of the amplified wavefront, which is necessary in adaptive imaging applications, is also demonstrated.