International Conference on Ultrafast Phenomena
Dynamics of Coherently Excited Semiconductor Microcavities
June‐Koo Kevin Rhee, Theodore B. Norris, Yasuhiko Arakawa, Masao Nishioka, Claude Weisbuch
Abstract
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.