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arXiv:1612.00954

The formation of long-lived high-correlated states of light and polarization in high-quality semiconductor microcavity at the resonant laser excitation

A. A. Demenev, С. В. Новиков, Daniil Domaretskiy, A.L. Parakhonsky, Lebedev, Mikhail

Published Dec 3, 2016• 0 citations
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Abstract

The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and damping times of a nanosecond range. It was shown that the oscillations are not attributed to weak Rabi interaction between long-lived exciton states and intracavity electromagnetic field. The study of a response with high spectral resolution had revealed that the oscillations arise if a spectral position as well as a period of longitudinal laser modes is similar to modulation components of a microcavity transmission spectrum.

DOI
10.48550/arxiv.1612.00954

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We report on the optical response of a semiconductor microcavity featuring a strong exciton–photon coupling. The weak excitation regime is investigated experimentally by means of time-resolved transmission and four-wave mixing experiments. The influence of electronic disorder on the coherent exciton–photon dynamics is discussed in terms of the solutions of the Maxwell-Bloch equations. The high excitation regime is investigated by using transient sub-picosecond pump–probe experiments. Optical amplification of the probe beam (up to a factor of five), as well as a fundamental change of the optical spectra, have been found close to and above the exciton saturation density. The observed oscillations are corresponding to the Rabi frequency of the excitons in the pump field.
The spectral response of a monolithic semiconductor quantum microcavity with quantum wells as the active medium displays mode splitting when the quantum wells and the optical cavity are in resonance. This effect can be seen as the Rabi vacuum-field splitting of the quantum-well excitons, or more classically as the normal-mode splitting of coupled oscillators, the excitons, and the electromagnetic field of the microcavity. An exciton oscillator strength of 4\ifmmode\times\else\texttimes\fi{}1012{10}^{12}1012 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ is deduced for 76-\AA{} quantum wells.
Semiconductor microcavities are widely used to study collective interactions of cavity exciton-polaritons leading to their condensation phenomenon. Exciton-light interaction is highly enhanced in such structures due to the resonance enhancement of the electromagnetic field inside the high quality cavity. Considerably lower interest is concerned to exciton states non-resonant with the cavity mode for which the exciton-photon interaction is strongly reduced due to the existence of the cavity. We point out here that these states are responsible for non-classical light generation in semiconductor microcavities.